典型文献
Structural and optical properties of AIN sputtering deposited on sapphire substrates with various orientations
文献摘要：
AIN thin films were deposited on c-,a-and r-plane sapphire substrates by the magnetron sputtering technique.The in-fluence of high-temperature thermal annealing (HTTA) on the structural,optical properties as well as surface stoichiometry were comprehensively investigated.The significant narrowing of the (0002) diffraction peak to as low as 68 arcsec of AIN after HTTA implies a reduction of tilt component inside the AIN thin films,and consequently much-reduced dislocation densities.This is also supported by the appearance of E2(high) Raman peak and better Al-N stoichiometry after HTTA.Furthermore,the in-creased absorption edge after HTTA suggests a reduction of point defects acting as the absorption centers.It is concluded that HTTA is a universal post-treatment technique in improving the crystalline quality of sputtered AIN regardless of sapphire orienta-tion.
文献关键词：
中图分类号：
作者姓名：
Xianchun Peng;Jie Sun;Huan Liu;Liang Li;Qikun Wang;Liang Wu;Wei Guo;Fanping Meng;Li Chen;Feng Huang;Jichun Ye
作者机构：
Ningbo Institute of Materials Technology and Engineering,Chinese Academy of Sciences,Ningbo 315201,China;Faculty of Materials Science and Chemical Engineering,Ningbo University,Ningbo 315211,China;State Key Laboratory of Advanced Special Steel,Shanghai Key Laboratory of Advanced Ferrous Metallurgy,School of Materials Science and Engineering,Shanghai University,Shanghai 200044,China;Ultratrend Technologies Inc.,Hangzhou 311199,China
文献出处：
引用格式：
[1]Xianchun Peng;Jie Sun;Huan Liu;Liang Li;Qikun Wang;Liang Wu;Wei Guo;Fanping Meng;Li Chen;Feng Huang;Jichun Ye-.Structural and optical properties of AIN sputtering deposited on sapphire substrates with various orientations)[J].半导体学报（英文版）,2022(02):79-85
A类：
HTTA
B类：
Structural,optical,properties,AIN,sputtering,deposited,sapphire,substrates,various,orientations,thin,films,were,plane,by,magnetron,technique,fluence,high,temperature,thermal,annealing,structural,well,surface,stoichiometry,comprehensively,investigated,significant,narrowing,diffraction,peak,low,arcsec,after,implies,reduction,tilt,component,inside,consequently,much,reduced,dislocation,densities,This,also,supported,appearance,E2,Raman,better,Furthermore,creased,absorption,edge,suggests,point,defects,acting,centers,It,concluded,that,universal,post,treatment,improving,crystalline,quality,sputtered,regardless
AB值：
0.55667
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