典型文献
Growth and properties of hydrogenated microcrystalline silicon thin films prepared by magnetron sputtering with different substrate temperatures
文献摘要：
Hydrogenated microcrystalline silicon(μc-Si∶H)thin films were deposited by an radio frequency(RF)(13.56 MHz)magnetron sputtering at different substrate temperatures(100-300℃),and the influences of substrate temperature on the growth and properties of μc-Si∶H thin films were investigated.Surface roughness and crystallinity of the thin films increase as substrate temperature in-creases.And all thin films are at the transition region(Xc=49.2％～61.0％).The μc-Si∶H thin films deposited at lower substrate temperature(≤200℃)represent a weak(220)preferred orientation,while the thin films deposited at higher substrate temperature(≥250℃)exhibit a weak(111)preferred orientation.The μc-Si∶H thin films have a dense structure,and the structural compactness of the thin films slightly increases with substrate temperature in-creasing.The Fourier transform infrared spectroscopy(FT-IR)results indicate that the μc-Si∶H thin films have a low hydrogen content(3.9 at％-5.6 at％),which is in favor of reducing light-induced degradation effect.
文献关键词：
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作者姓名：
Lin-Qing Wang;Wei-Yan Wang;Jin-Hua Huang;Rui-Qin Tan;Wei-Jie Song;Jian-Min Chen
作者机构：
State Key Laboratory of Solid Lubrication,Lanzhou Institute of Chemical Physics,Chinese Academy of Sciences,Lanzhou 730000,China;University of Chinese Academy of Sciences,Beijing 100049,China;Ningbo Institute of Material Technology and Engineering,Chinese Academy of Sciences,Ningbo 315201,China;Faculty of Information Science and Engineering,Ningbo University,Ningbo 315211,China
文献出处：
引用格式：
[1]Lin-Qing Wang;Wei-Yan Wang;Jin-Hua Huang;Rui-Qin Tan;Wei-Jie Song;Jian-Min Chen-.Growth and properties of hydrogenated microcrystalline silicon thin films prepared by magnetron sputtering with different substrate temperatures)[J].稀有金属（英文版）,2022(03):1037-1042
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AB值：
0.463728
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