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典型文献
Enhancement in photovoltaic properties of Nd:SnS films prepared by low-cost NSP method
文献摘要:
The inner transition metal(ITM)neodymium(Nd)-doped tin sulfide(Nd:SnS)thin films with various Nd concentrations were coated by nebulizer spray pyrolysis(NSP)technique at 350℃.All the coated films were analyzed for their structural,optical and photoelectrical properties.X-ray diffractometer(XRD)study showed(111)direction as the highly preferred orientation with orthorhombic crystal structure for all the films.The intensity of the peaks was found to increase until 5 at%Nd doping and then reduced for higher(7 at%Nd)doping concentration.Atomic force microscopic(AFM)images of the films proclaimed an increase in the surface and line roughness of the films by increasing Nd concentrations.Optical analysis on the films showed a variation in energy gap from 2.05 to 1.69 eV when the doping concentration increased from 0 at%to 7 at%.At 5 at%Nd doping,the photoluminescence(PL)spectra displayed a single strong emission peak at 723.1 nm with enhanced intensity corre-sponding to near-band-edge emission.All the SnS thin films exhibited p-type behavior with the lowest resistivity of~4.311 Ω·cm and high carrier concentrations of~1.441 x 1017 cm-3 for 5 at%Nd doping level as observed from Hall effect studies.Furthermore,fluorine-doped tin oxide(FTO)/n-CdS/p-Nd:SnS hetero-junction solar cells were prepared and the current-voltage curve in dark and light condition was obtained for the device.An efficiency of 0.135%was observed for the solar cell fab-ricated with 5 at%Nd-doped SnS thin film.
文献关键词:
作者姓名:
S.Sebastian;I.Kulandaisamy;A.M.S.Arulanantham;S.Valanarasu;A.Kathalingam;Mohd.Shkir;Salem AlFaify
作者机构:
PG&Research Department of Physics,Arul Anandar College,Karumathur,Madurai 625 514,India;Millimeter Wave Innovation Technology Research Center(MINT),Dongguk University-Seoul,Seoul 04620,Republic of Korea;Advanced Functional Materials&Optoelectronics Laboratory(AFMOL),Department of Physics,Faculty of Science,King Khalid University,Abha 9004,Saudi Arabia
引用格式:
[1]S.Sebastian;I.Kulandaisamy;A.M.S.Arulanantham;S.Valanarasu;A.Kathalingam;Mohd.Shkir;Salem AlFaify-.Enhancement in photovoltaic properties of Nd:SnS films prepared by low-cost NSP method)[J].稀有金属(英文版),2022(05):1661-1670
A类:
B类:
Enhancement,photovoltaic,properties,Nd,SnS,films,prepared,by,cost,NSP,method,inner,transition,metal,ITM,neodymium,doped,tin,sulfide,thin,various,concentrations,were,coated,nebulizer,spray,pyrolysis,technique,All,analyzed,their,structural,optical,photoelectrical,diffractometer,study,showed,direction,highly,preferred,orientation,orthorhombic,crystal,structure,intensity,peaks,was,found,until,doping,then,reduced,higher,Atomic,force,microscopic,AFM,images,proclaimed,surface,line,roughness,increasing,Optical,analysis,variation,energy,gap,from,eV,when,increased,photoluminescence,PL,spectra,displayed,single,strong,emission,enhanced,corre,sponding,near,band,edge,exhibited,type,behavior,lowest,resistivity,carrier,level,observed,Hall,effect,studies,Furthermore,fluorine,oxide,FTO,CdS,hetero,junction,solar,cells,current,voltage,curve,dark,light,condition,obtained,device,An,efficiency,fab,ricated
AB值:
0.558817
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