The energy-efficient deep ultraviolet(DUV)optoelectronic devices suffer from critical issues associated with the poor quality and large strain of nitride material system caused by the inherent mismatch of heteroepitaxy.In this work,we have prepared the strain-free AIN film with low dislocation density(DD)by graphene(Gr)-driving strain-pre-store engineering and a unique mechanism of strain-relaxation in quasi-van der Waals(QvdW)epitaxy is presented.The DD in AIN epilayer with Gr exhibits an anomalous sawtooth-like evolution during the whole epitaxy process.Gr can help to enable the annihilation of the dislocations originated from the interface between AIN and Gr/sapphire by impelling a lateral two-dimensional growth mode.Remarkably,it can induce AIN epilayer to pre-store sufficient tensile strain during the early growth stage and thus compensate the compressive strain caused by hetero-mismatch.Therefore,the low-strain state of the DUV light-emitting diode(DUV-LED)epitaxial structure is realized on the strain-free AIN template with Gr.Furthermore,the DUV-LED with Gr demonstrate 2.1 times enhancement of light output power and a better stability of luminous wavelength compared to that on bare sapphire.An in-depth understanding of this work reveals diverse beneficial impacts of Gr on nitride growth and provides a novel strategy of relaxing the vital requirements of hetero-mismatch in conventional heteroepitaxy.

Hongliang Chang;Zhetong Liu;Shenyuan Yang;Yaqi Gao;Jingyuan Shan;Bingyao Liu;Jingyu Sun;Zhaolong Chen;Jianchang Yan;Zhiqiang Liu;Junxi Wang;Peng Gao;Jinmin Li;Zhongfan Liu;Tongbo Wei

Research and Development Center for Semiconductor Lighting Technology,Institute of Semiconductors,Chinese Academy of Sciences,100083 Beijing,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,100049 Beijing,China;Center for Nanochemistry(CNC),Beijing Science and Engineering Center for Nanocarbons,Beijing National Laboratory for Molecular Sciences,College of Chemistry and Molecular Engineering,Peking University,100871 Beijing,China;Electron Microscopy Laboratory,and International Center for Quantum Materials,School of Physics,Peking University,100871 Beijing,China;Beijing graphene institute(BGI),100095 Beijing,China;Academy for Advanced Interdisciplinary Studies,Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials,Peking University,100871 Beijing,China;State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,100083 Beijing,China

光：科学与应用（英文版）

[1]Hongliang Chang;Zhetong Liu;Shenyuan Yang;Yaqi Gao;Jingyuan Shan;Bingyao Liu;Jingyu Sun;Zhaolong Chen;Jianchang Yan;Zhiqiang Liu;Junxi Wang;Peng Gao;Jinmin Li;Zhongfan Liu;Tongbo Wei-.Graphene-driving strain engineering to enable strain-free epitaxy of AIN film for deep ultraviolet light-emitting diode)[J].光：科学与应用（英文版）,2022(05):808-819

heteroepitaxy,QvdW,impelling

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