Recent advancements in integrated soliton microcombs open the route to a wide range of chip-based communication,sensing,and metrology applications.The technology translation from laboratory demonstrations to real-world applications requires the fabrication process of photonics chips to be fully CMOS-compatible,such that the manufacturing can take advantage of the ongoing evolution of semiconductor technology at reduced cost and with high volume.Silicon nitride has become the leading CMOS platform for integrated soliton devices,however,it is an insulator and lacks intrinsic second-order nonlinearity for electro-optic modulation.Other materials have emerged such as AIN,LiNbO3,AIGaAs and GaP that exhibit simultaneous second-and third-order nonlinearities.Here,we show that silicon carbide(SiC)--already commercially deployed in nearly ubiquitous electrical power devices such as RF electronics,MOSFET,and MEMS due to its wide bandgap properties,excellent mechanical properties,piezoelectricity and chemical inertia--is a new competitive CMOS-compatible platform for nonlinear photonics.High-quality-factor microresonators(Q=4×106)are fabricated on 4H-SiC-on-insulator thin films,where a single soliton microcomb is generated.In addition,we observe wide spectral translation of chaotic microcombs from near-infrared to visible due to the second-order nonlinearity of SiC.Our work highlights the prospects of SiC for future low-loss integrated nonlinear and quantum photonics that could harness electro-opto-mechanical interactions on a monolithic platform.

Chengli Wang;Jin Li;Ailun Yi;Zhiwei Fang;Liping Zhou;Zhe Wang;Rui Niu;Yang Chen;Jiaxiang Zhang;Ya Cheng;Junqiu Liu;Chun-Hua Dong;Xin Ou

State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,200050 Shanghai,China;The Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,100049 Beijing,China;CAS Key Laboratory of Quantum Information,University of Science and Technology of China,230026 Hefei,China;CAS Center for Excellence in Quantum Information and Quantum Physics,University of Science and Technology of China,230026 Hefei,China;The Extreme Optoelectromechanics Laboratory(XXL),School of Physics and Electronic Science,East China Normal University,200241 Shanghai,China;State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,201800 Shanghai,China;International Quantum Academy,518048 Shenzhen,China;Hefei National Laboratory,University of Science and Technology of China,Hefei 230026,China

光：科学与应用（英文版）

[1]Chengli Wang;Jin Li;Ailun Yi;Zhiwei Fang;Liping Zhou;Zhe Wang;Rui Niu;Yang Chen;Jiaxiang Zhang;Ya Cheng;Junqiu Liu;Chun-Hua Dong;Xin Ou-.Soliton formation and spectral translation into visible on CMOS-compatible 4H-silicon-carbide-on-insulator platform)[J].光：科学与应用（英文版）,2022(12):3059-3068

AIGaAs

Soliton,formation,spectral,translation,into,visible,CMOS,compatible,4H,silicon,carbide,insulator,platform,Recent,advancements,integrated,soliton,microcombs,open,route,wide,range,communication,sensing,metrology,applications,technology,from,laboratory,demonstrations,real,world,requires,fabrication,process,photonics,chips,fully,such,that,manufacturing,can,take,advantage,ongoing,evolution,semiconductor,reduced,cost,volume,Silicon,nitride,has,become,leading,devices,however,lacks,intrinsic,second,order,nonlinearity,optic,modulation,Other,materials,have,emerged,AIN,LiNbO3,GaP,exhibit,simultaneous,third,nonlinearities,Here,show,SiC,already,commercially,deployed,nearly,ubiquitous,electrical,power,RF,electronics,MOSFET,MEMS,due,its,bandgap,properties,excellent,mechanical,piezoelectricity,chemical,inertia,new,competitive,High,quality,microresonators,fabricated,thin,films,where,single,generated,In,addition,observe,chaotic,infrared,Our,work,highlights,prospects,future,low,loss,quantum,could,harness,opto,interactions,monolithic

0.60667