典型文献
Preparation and characterization of single(200)-oriented TiN thin films deposited by DC magnetron reactive sputtering
文献摘要：
Single(200)-oriented TiN thin films were depos-ited on quartz substrate by direct current(DC)magnetron reactive sputtering process at a wide range of substrate tem-perature from 200 to 600℃.The effects of sputtering pressure and substrate temperature on the crystalline nature,morphol-ogy,electrical and optical properties of the deposited thin films were analyzed by X-ray diffraction(XRD),atomic force microscopy(AFM),four-point resistivity test system and ultraviolet visible near-infrared(UV-Vis-NIR)spectroscopy,respectively.The results show that single(200)-oriented TiN thin films can be obtained at a wide range of substrate tem-perature from 200 to 600℃with the grain size increasing from 35.9 to 64.5 nm.The resistivity of the product is as low as 95 μΩ·cm,and the value of the optical reflectance is above 68％in the near-infrared(NIR)range of 760-1500 nm.
文献关键词：
中图分类号：
作者姓名：
Zhen-Dong Wang;Zhen-Quan Lai
作者机构：
Department of Physics,Nanchang University,Nanchang 330031,China
文献出处：
引用格式：
[1]Zhen-Dong Wang;Zhen-Quan Lai-.Preparation and characterization of single(200)-oriented TiN thin films deposited by DC magnetron reactive sputtering)[J].稀有金属（英文版）,2022(04):1380-1384
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Preparation,characterization,single,oriented,TiN,thin,films,deposited,by,DC,magnetron,reactive,sputtering,Single,were,quartz,substrate,direct,current,process,wide,range,from,effects,pressure,temperature,crystalline,nature,morphol,ogy,electrical,optical,properties,analyzed,ray,diffraction,atomic,force,microscopy,AFM,four,point,resistivity,test,system,ultraviolet,visible,near,infrared,UV,Vis,NIR,spectroscopy,respectively,results,show,that,can,be,obtained,grain,size,increasing,product,low,value,reflectance,above
AB值：
0.518621
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