典型文献
Insight into the photoinduced phenomena in ternary Ge-Sb-Se sputtered thin films
文献摘要:
The kinetics of photoinduced changes, namely, photobleaching and photodarkening in sputtered ternary Ge29Sb8Se63 thin films, was studied. The study of time evolution of the absorption coefficient Δα(t) upon room-temperature near-bandgap irradiation revealed several types of photoinduced effects. The as-deposited films exhibited a fast photodarkening followed by a dominative photobleaching process. Annealed thin films were found to undergo photodarkening only. The local structure studied by Raman scattering spectroscopy showed significant structural changes upon thermal annealing, which are presumably responsible for a transition from the photobleaching observed in as-deposited and reversible photodarkening in annealed thin films. Moreover, a transient photodarkening process was observed in both as-deposited and annealed thin films. The influence of the initial film thickness and laser optical intensity on the kinetics of photoinduced changes is discussed.
文献关键词:
中图分类号:
作者姓名:
Tomá? Halenkovi?;Magdaléna Kotrla;Jan Gutwirth;Virginie Nazabal;Petr Němec
作者机构:
Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Pardubice, Czech Republic;Univ Rennes, CNRS, ISCR (Institut des Sciences Chimiques de Rennes)–UMR 6226, F-35000 Rennes, France;e-mail: tomas.halenkovic@upce.cz;e-mail: petr.nemec@upce.cz
文献出处:
引用格式:
[1]Tomá? Halenkovi?;Magdaléna Kotrla;Jan Gutwirth;Virginie Nazabal;Petr Němec-.Insight into the photoinduced phenomena in ternary Ge-Sb-Se sputtered thin films)[J].光子学研究(英文),2022(09):2261
A类:
photobleaching,photodarkening,Ge29Sb8Se63,Annealed
B类:
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AB值:
0.486835
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