典型文献
Structure and properties of indium-doped ZnO films prepared by RF magnetron sputtering under different pressures
文献摘要：
High conductive and transparent In-doped ZnO thin films were deposited on glass substrates by radio-fre-quency(RF)magnetron sputtering at 250℃.Argon gas was used as the sputtering gas,and its pressure varies from 0.1 to 4.0 Pa.The influences of deposition pressure on the structural,electrical and optical properties of the films were investigated by means of X-ray diffraction(XRD),scan-ning electron microscope(SEM)and Hall and transmit-tance measurements.The optical constant of the films was estimated from transmittance data using a nonlinear pro-gramming method.It is found that the deposition pressure affects the properties of the films significantly.The film deposited at 2.0 Pa shows the optimal crystal quality with a high transmittance of 85％in the visible range and a low resistivity of 2.4×10-3 Ω·cm and can thus be used as a transparent electrode.
文献关键词：
中图分类号：
作者姓名：
Li-Ping Peng;A-Ling He;Liang Fang;Xiao-Fei Yang
作者机构：
Research Center of Laser Fusion,Chinese Academy of Engineering Physics,Mianyang 621900,China;Department of Applied Physics,Chongqing University,Chongqing 400030,China;Science and Technology Information Center,Chinese Academy of Engineering Physics,Mianyang 621900,China
文献出处：
引用格式：
[1]Li-Ping Peng;A-Ling He;Liang Fang;Xiao-Fei Yang-.Structure and properties of indium-doped ZnO films prepared by RF magnetron sputtering under different pressures)[J].稀有金属（英文版）,2022(09):3239-3243
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AB值：
0.58637
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