典型文献
Influence of modulation period for β-Cu2+xSe/SiC nano-multilayer films on their thermoelectric properties
文献摘要：
In this study,β-Cu2+xSe/SiC nano-multilayer films with different modulation period were successfully deposited on SiO2/Si substrates by sputtering alternately using Cu-Se and SiC targets.The deposited films were observed on both surface and cross-section,and the thermoelectric properties were studied.The results show that both carrier concentration and mobility at room temperature decreased with the reducing modulation period for the nano-multilayer films.The conductivity slightly decreased and Seebeck coefficient greatly increased with the reducing modulation period.As a result of competition,the power factor of the nano multilayer films increased with the reducing modulation period because the positive effect of the Seebeck coefficient exceeded the negative effect of the conductivity.In the case ofβ-Cu2+xSe/SiC nano multilayer film with the smallest modulation periods(210 nm),the power factor reached 0.39 mWm-1K-2 and 0.59 mWm-1K-2 at room temperature and 325℃,respectively.The enhanced power factor for nano multilayer films is attributed to the scattering process at theβ-Cu2+xSe/SiC layer interface,which reduces the carrier concentration and the mobility.It is concluded that the thermoelectric properties of β-Cu2+xSe films can be effectively improved by designing nano multilayer structure.
文献关键词：
中图分类号：
作者姓名：
Guihong Song;Yu Chen;Hao Du;Xiaoyuan Wei;Guipeng Li;Yusheng Wu;Junhua You;Fang Hu
作者机构：
School of Materials Science and Technology,Shenyang University of Technology,Shenyang,110870,China;Guangzhou Maritime University,Guangzhou,510725,China;Institute of Corrosion Science and Technology,Guangzhou,510530,China
文献出处：
引用格式：
[1]Guihong Song;Yu Chen;Hao Du;Xiaoyuan Wei;Guipeng Li;Yusheng Wu;Junhua You;Fang Hu-.Influence of modulation period for β-Cu2+xSe/SiC nano-multilayer films on their thermoelectric properties)[J].自然科学进展·国际材料（英文）,2022(05):586-593
A类：
Cu2+xSe,mWm
B类：
Influence,modulation,SiC,nano,multilayer,films,their,thermoelectric,properties,this,study,different,were,successfully,deposited,SiO2,substrates,by,sputtering,alternately,using,targets,observed,both,surface,cross,section,studied,results,show,that,carrier,concentration,mobility,room,temperature,decreased,reducing,conductivity,slightly,Seebeck,coefficient,greatly,increased,competition,power,because,positive,exceeded,negative,case,smallest,periods,reached,1K,respectively,enhanced,attributed,scattering,process,interface,which,reduces,It,concluded,can,effectively,improved,designing,structure
AB值：
0.378253
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