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典型文献
Growth and characterization of β-Ga2O3 thin films grown on off-angled Al2O3 substrates by metal-organic chemical vapor deposition
文献摘要：
Beta-gallium oxide(β-Ga2O3)thin films were deposited on c-plane(0001)sapphire substrates with different mis-cut angles along<1120>by metal-organic chemical vapor deposition(MOCVD).The structural properties and surface morphology of as-grown β-Ga2O3 thin films were investigated in detail.It was found that by using thin buffer layer and mis-cut substrate technology,the full width at half maximum(FWHM)of the((2)01)diffraction peak of the β-Ga2O3 film is decreased from 2° on c-plane(0001)Al2O3 substrate to 0.64° on an 8° off-angled c-plane(0001)Al2O3 substrate.The surface root-mean-square(RMS)roughness can also be improved greatly and the value is 1.27 nm for 8° off-angled c-plane(0001)Al2O3 substrate.Room temper-ature photoluminescence(PL)was observed,which was attributed to the self-trapped excitons formed by oxygen and gallium vacancies in the film.The ultraviolet-blue PL intensity related with oxygen and gallium vacancies is decreased with the increas-ing mis-cut angle,which is in agreement with the improved crystal quality measured by high resolution X-ray diffraction(HR-XRD).The present results provide a route for growing high quality β-Ga2O3 film on Al2O3 substrate.
文献关键词：
中图分类号：
[1] 医药、卫生（R） / 药学（R9） / 药理学（R96） / 实验药理学（R965）
[2] 医药、卫生（R） / 基础医学（R3） / 病理学（R36） / 病理过程（R364）
[3] 数理科学和化学（O） / 力学（O3） / 振动理论（O32） / 非线性振动（O322）
作者姓名：
Yabao Zhang;Jun Zheng;Peipei Ma;Xueyi Zheng;Zhi Liu;Yuhua Zuo;Chuanbo Li;Buwen Cheng
作者机构：
State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;School of Science,Minzu University of China,Beijing 100081,China
文献出处：
半导体学报（英文版）
引用格式：
[1]Yabao Zhang;Jun Zheng;Peipei Ma;Xueyi Zheng;Zhi Liu;Yuhua Zuo;Chuanbo Li;Buwen Cheng-.Growth and characterization of β-Ga2O3 thin films grown on off-angled Al2O3 substrates by metal-organic chemical vapor deposition)[J].半导体学报（英文版）,2022(09):67-72
A类：
B类：
Growth,characterization,Ga2O3,thin,films,grown,off,angled,Al2O3,substrates,by,metal,organic,chemical,vapor,deposition,Beta,gallium,oxide,were,deposited,plane,sapphire,different,mis,cut,angles,along,MOCVD,structural,properties,surface,morphology,investigated,detail,It,was,found,that,using,buffer,layer,technology,full,width,half,maximum,FWHM,diffraction,peak,decreased,from,root,mean,square,RMS,roughness,also,be,improved,greatly,value,Room,temper,ature,photoluminescence,PL,observed,which,attributed,self,trapped,excitons,formed,oxygen,vacancies,ultraviolet,blue,intensity,related,increas,agreement,crystal,quality,measured,high,resolution,ray,present,results,provide,route,growing
AB值：
0.515819
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