典型文献
Electrical and optical properties of hydrogen plasma treated β-Ga2O3 thin films
文献摘要：
The behavior of H in β-Ga2O3 is of substantial interest because it is a common residual impurity that is present in β-Ga2O3,regardless of the synthesis methods.Herein,we report the influences of H-plasma exposure on the electric and optical properties of the heteroepitaxial β-Ga2O3 thin films grown on sapphire substrates by chemical vapor deposition.The results in-dicate that the H incorporation leads to a significantly increased electrical conductivity,a greatly reduced defect-related photolu-minescence emission,and a slightly enhanced transmittance,while it has little effect on the crystalline quality of the β-Ga2O3 films.The significant changes in the electrical and optical properties of β-Ga2O3 may originate from the formation of shallow donor states and the passivation of the defects by the incorporated H.Temperature dependent electrical properties of the H-in-corporated β-Ga2O3 films are also investigated,and the dominant scattering mechanisms at various temperatures are dis-cussed.
文献关键词：
中图分类号：
作者姓名：
Qian Jiang;Junhua Meng;Yiming Shi;Zhigang Yin;Jingren Chen;Jing Zhang;Jinliang Wu;Xingwang Zhang
作者机构：
Key Lab of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;School of Information Science and Technology,North China University of Technology,Beijing 100144,China;Faculty of Science,Beijing University of Technology,Beijing 100124,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China
文献出处：
引用格式：
[1]Qian Jiang;Junhua Meng;Yiming Shi;Zhigang Yin;Jingren Chen;Jing Zhang;Jinliang Wu;Xingwang Zhang-.Electrical and optical properties of hydrogen plasma treated β-Ga2O3 thin films)[J].半导体学报（英文版）,2022(09):73-79
A类：
heteroepitaxial,photolu
B类：
Electrical,optical,properties,hydrogen,plasma,treated,Ga2O3,thin,films,behavior,substantial,interest,because,common,residual,impurity,that,present,regardless,synthesis,methods,Herein,we,report,influences,exposure,grown,sapphire,substrates,by,chemical,vapor,deposition,results,dicate,incorporation,leads,significantly,increased,electrical,conductivity,greatly,reduced,related,minescence,emission,slightly,enhanced,transmittance,while,has,little,effect,crystalline,quality,changes,may,originate,from,formation,shallow,donor,states,passivation,defects,incorporated,Temperature,dependent,are,also,investigated,dominant,scattering,mechanisms,various,temperatures,dis,cussed
AB值：
0.591652
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