典型文献
Migration of weakly bonded oxygen atoms in a-IGZO thin films and the positive shift of threshold voltage in TFTs
文献摘要：
Amorphous indium-gallium-zinc oxide(a-IGZO)thin films are prepared by pulsed laser deposition and fabricated into thin-film transistor(TFT)devices.In-situ x-ray photoelectron spectroscopy(XPS)illustrates that weakly bonded oxygen(O)atoms exist in a-IGZO thin films deposited at high O2 pressures,but these can be eliminated by vacuum annealing.The threshold voltage(Vth)of the a-IGZO TFTs is shifted under positive gate bias,and the Vth shift is positively related to the deposition pressure.A temperature variation experiment in the range of 20 K-300 K demonstrates that an activation energy of 144 meV is required for the Vth shift,which is close to the activation energy required for the migration of weakly bonded O atoms in a-IGZO thin films.Accordingly,the Vth shift is attributed to the acceptor-like states induced by the accumulation of weakly bonded O atoms at the a-IGZO/SiO2 interface under positive gate bias.These results provide an insight into the mechanism responsible for the Vth shift of the a-IGZO TFTs and help in the production of reliable designs.
文献关键词：
中图分类号：
作者姓名：
Chen Wang;Wenmo Lu;Fengnan Li;Qiaomei Luo;Fei Ma
作者机构：
State Key Laboratory for Mechanical Behavior of Materials,Xi'an Jiaotong University,Xi'an 710049,China
文献出处：
引用格式：
[1]Chen Wang;Wenmo Lu;Fengnan Li;Qiaomei Luo;Fei Ma-.Migration of weakly bonded oxygen atoms in a-IGZO thin films and the positive shift of threshold voltage in TFTs)[J].中国物理B（英文版）,2022(09):446-452
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AB值：
0.479557
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