Nowadays,photovoltaic effect has been widely studied in various ferroelectric materials due to its ap-plications as optoelectronic devices.In this work,with BiFeO3(BFO)films as the photovoltaic materials,we report the effects of Eu3+doping content on the phase structure,ferroelectric and optical properties of BFO films grown on Ca0.96Ce0.04MnO3/YAlO3(001)substrate.We found that a small doping level of 0.05 could induce a phase change of BFO from tetragonal to rhombohedral,due to the shrinking of the lattice upon Eu3+doping and the breaking of surface terrace structure induced by Ca0.96Ce0.04Mn03 layer.This results in a sharp band gap reduction from 3.30 eV to 2.60 eV,and a decrease in the coercivity of ferroelectric polarization switching.Based on these findings,we investigate the photovoltaic effects of ITO/EuxBi1-xFeO3/Ca0.96Ce0.04MnO3 vertical capacitors.It is found that the short-circuit current density(Jsc)decreases with increasing Eu3+doping,whereas the open-circuit voltage(Voc)first increases to a level of 0.1 V and then decreases with further Eu3+doping.This could be explained by the combined ef-fect of Schottky-junction and depolarization field on the photovoltaic process.Our research suggests that a moderate Eu3+doping is helpful for enhancing the photovoltaic effect of BFO thin film devices.

Dingshuai Feng;Biaohong Huang;Lingli Li;Xiaoqi Li;Youdi Gu;Weijin Hu;Zhidong Zhang

Shenyang National Laboratory for Materials Science,Institute of Metal Research,Chinese Academy of Sciences,Shenyang 110016,China;School of Materials Science and Engineering,University of Science and Technology of China,Shenyang 110016,China

材料科学技术（英文版）

[1]Dingshuai Feng;Biaohong Huang;Lingli Li;Xiaoqi Li;Youdi Gu;Weijin Hu;Zhidong Zhang-.The effects of Eu3+doping on the epitaxial growth and photovoltaic properties of BiFeO3 thin films)[J].材料科学技术（英文版）,2022(11):49-55

96Ce0,04MnO3,04Mn03,EuxBi1,xFeO3

effects,Eu3+doping,epitaxial,growth,photovoltaic,properties,BiFeO3,thin,films,Nowadays,been,widely,studied,various,ferroelectric,materials,due,its,plications,optoelectronic,devices,In,this,work,BFO,we,report,content,phase,structure,optical,grown,Ca0,YAlO3,substrate,We,found,that,small,level,could,change,from,tetragonal,rhombohedral,shrinking,lattice,upon,breaking,surface,terrace,induced,by,layer,This,results,sharp,band,gap,reduction,eV,coercivity,switching,Based,these,findings,investigate,ITO,vertical,capacitors,It,short,circuit,current,density,Jsc,decreases,increasing,whereas,open,voltage,Voc,first,increases,then,further,explained,combined,Schottky,junction,depolarization,field,process,Our,research,suggests,moderate,helpful,enhancing

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