典型文献
Three-terminal germanium-on-silicon avalanche photodiode with extended p-charge layer for dark current reduction
文献摘要：
Germanium-on-silicon(Ge-on-Si)avalanche photodiodes(APDs)are widely used in near-infrared detection,laser ranging,free space communication,quantum communication,and other fields.However,the existence of lattice defects at the Ge/Si interface causes a high dark current in the Ge-on-Si APD,degrading the device sensitivity and also increasing energy consumption in integrated circuits.In this work,we propose a novel surface illuminated Ge-on-Si APD architecture with three terminals.Besides two electrodes on Si substrates,a third electrode is designed for Ge to regulate the control current and bandwidth,achieving multiple outputs of a single device and reducing the dark current of the device.When the voltage on Ge is-27.5 V,the proposed device achieves a dark current of 100 nA,responsivity of 9.97 A/W at-40 dBm input laser power at 1550 nm,and optimal bandwidth of 142 MHz.The low dark current and improved responsivity can meet the requirements of autono-mous driving and other applications demanding weak light detection.
文献关键词：
中图分类号：
作者姓名：
XIAOBIN LIU;XUETONG LI;YUXUAN LI;YINGZHI LI;ZIHAO ZHI;MIN TAO;BAISONG CHEN;LANXUAN ZHANG;PENGFEI GUO;GUOQIANG LO;XUEYAN LI;FENGLI GAO;BONAN KANG;JUNFENG SONG
作者机构：
State Key Laboratory of Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,Changchun 130012,China;Advance Micro Foundry Pte Ltd,Singapore 117685,Singapore;Peng Cheng Laboratory,Shenzhen 518000,China
文献出处：
引用格式：
[1]XIAOBIN LIU;XUETONG LI;YUXUAN LI;YINGZHI LI;ZIHAO ZHI;MIN TAO;BAISONG CHEN;LANXUAN ZHANG;PENGFEI GUO;GUOQIANG LO;XUEYAN LI;FENGLI GAO;BONAN KANG;JUNFENG SONG-.Three-terminal germanium-on-silicon avalanche photodiode with extended p-charge layer for dark current reduction)[J].光子学研究（英文）,2022(08):1956-1963
A类：
autono
B类：
Three,germanium,silicon,avalanche,extended,charge,layer,dark,current,reduction,Germanium,Si,photodiodes,APDs,widely,used,near,infrared,detection,laser,ranging,free,space,communication,quantum,other,fields,However,existence,lattice,defects,interface,causes,high,degrading,device,sensitivity,also,increasing,energy,consumption,integrated,circuits,In,this,work,novel,surface,illuminated,architecture,three,terminals,Besides,two,electrodes,substrates,third,designed,regulate,control,bandwidth,achieving,multiple,outputs,single,reducing,When,voltage,proposed,achieves,nA,responsivity,dBm,input,power,optimal,MHz,low,improved,can,meet,requirements,mous,driving,applications,demanding,weak,light
AB值：
0.586946
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