典型文献
High-power InAIAs/InGaAs Schottky barrier photodiodes for analog microwave signal transmission
文献摘要：
The design,manufacturing and DC and microwave characterization of high-power Schottky barrier InAIAs/InGaAs back-illuminated mesa structure photodiodes are presented.The photodiodes with 10 and 15μm mesa diameters operate at≥40 and 28 GHz,respectively,have the output RF power as high as 58 mW at a frequency of 20 GHz,the DC responsivity of up to 1.08 A/W depending on the absorbing layer thickness,and a photodiode dark current as low as 0.04 nA.We show that these photodiodes provide an advantage in the amplitude-to-phase conversion factor which makes them suitable for use in high-speed analog transmission lines with stringent requirements for phase noise.
文献关键词：
中图分类号：
作者姓名：
K.S.Zhuravlev;A.L.Chizh;K.B.Mikitchuk;A.M.Gilinsky;I.B.Chistokhin;N.A.Valisheva;D.V.Dmitriev;A.I.Toropov;M.S.Aksenov
作者机构：
A.V.Rzhanov Institute of Semiconductor Physics,The Siberian Branch of the Russian Academy of Sciences,Ac.Lavrentiev Avenue 13,Novosibirsk 630090,Russia;Laboratory of Microwave Photonics,SSPA "Optics,Optoelectronics and Laser Technology" of National Academy of Sciences of Belarus,Logoiski trakt 22,Minsk 220090,Belarus
文献出处：
引用格式：
[1]K.S.Zhuravlev;A.L.Chizh;K.B.Mikitchuk;A.M.Gilinsky;I.B.Chistokhin;N.A.Valisheva;D.V.Dmitriev;A.I.Toropov;M.S.Aksenov-.High-power InAIAs/InGaAs Schottky barrier photodiodes for analog microwave signal transmission)[J].半导体学报（英文版）,2022(01):63-67
A类：
InAIAs
B类：
High,power,InGaAs,Schottky,barrier,photodiodes,analog,microwave,signal,transmission,design,manufacturing,DC,characterization,high,back,illuminated,mesa,structure,are,presented,diameters,operate,GHz,respectively,have,output,RF,mW,frequency,responsivity,up,depending,absorbing,layer,thickness,dark,current,low,We,show,that,these,provide,advantage,amplitude,phase,conversion,which,makes,them,suitable,use,speed,lines,stringent,requirements,noise
AB值：
0.566915
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