典型文献
Lithium incorporation enhanced resistive switching behaviors in lithium lanthanum titanium oxide-based heterostructure
文献摘要：
Resistive switching devices with a high self-rectifying ratio are important for achieving the crossbar mem-ristor array that overcomes the sneak current issue.Herein,we demonstrate a single amorphous lithium lanthanum titanium oxide(LLTO)layer based Pt/LLTO/Pt device possessing a self-rectifying ratio higher than 1×104 that is comparable to the reported devices with complicated multi-layer stacking structures.Moreover,the device shows forming-free and highly uniform bipolar resistive switching(BRS)character-istic that facilitates the potential applications.The trap-controlled and trap-free space charge limited con-ductions are demonstrated to dominate the high and low resistance states of the device,respectively.The fast migration of lithium ions under external voltage accelerates the electron injection across the Pt/LLTO interface and also the space charge accumulation in the LLTO layer,and as a result,the high performance of the Pt/LLTO/Pt device was achieved.As demonstrated Pt/LLTO/Pt device sheds a light on the potential applications of the lithium ionic conductors in self-rectifying resistive switching devices.
文献关键词：
中图分类号：
作者姓名：
Yibo Deng;Xiaoguang Xu;Lu Zhang;Fei Du;Qi Liu;Jikun Chen;Kangkang Meng;Yong Wu;Ming Yang;Yong Jiang
作者机构：
School of Materials Science and Engineering,University of Science and Technology Beijing,Beijing 100083,China;Key Laboratory of Physics and Technology for Advanced Batteries(Ministry of Education),State Key Laboratory of Superhard Materials,College of Physics,Jilin University,Changchun 130012,China;Department of Physics,Southern University of Science and Technology,Shenzhen 518055,China;Department of Applied Physics,The Hong Kong Polytechnic University,Hong Kong SAR,China
文献出处：
引用格式：
[1]Yibo Deng;Xiaoguang Xu;Lu Zhang;Fei Du;Qi Liu;Jikun Chen;Kangkang Meng;Yong Wu;Ming Yang;Yong Jiang-.Lithium incorporation enhanced resistive switching behaviors in lithium lanthanum titanium oxide-based heterostructure)[J].材料科学技术（英文版）,2022(33):142-147
A类：
ristor,sneak,ductions
B类：
Lithium,incorporation,enhanced,resistive,switching,behaviors,lithium,lanthanum,titanium,oxide,heterostructure,Resistive,devices,self,rectifying,are,important,achieving,crossbar,mem,array,that,overcomes,current,issue,Herein,we,single,amorphous,LLTO,layer,Pt,possessing,higher,comparable,reported,complicated,multi,stacking,structures,Moreover,shows,forming,free,highly,uniform,bipolar,BRS,character,istic,facilitates,potential,applications,trap,controlled,space,charge,limited,demonstrated,dominate,low,resistance,states,respectively,fast,migration,under,external,voltage,accelerates,electron,injection,across,interface,also,accumulation,result,performance,was,achieved,sheds,light,ionic,conductors
AB值：
0.516117
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