典型文献
A broadband self-powered UV photodetector of aβ-Ga2O3/γ-CuI p-n junction
文献摘要：
The symmetric Ti/Au bi-layer point electrodes have been successfully patterned on the β-Ga2O3 films which are prepared by metal-organic chemical vapor deposition (MOCVD) and the γ-CuI films which are prepared by spin-coating.The fabricated heterojunction has a large open circuit voltage (Voc) of 0.69 V,desired for achieving self-powered operation of a photodetector.Irradiated by 254-nm ultraviolet (UV) light,when the bias voltage is-5 V,the dark current (Idark)of the device is 0.47 pA,the photocurrent (Iphoto) is-50.93 nA,and the photo-to-dark current ratio (Iphoto/Idark) reaches about 1.08× 105.The device has a stable and fast response speed in different wavelengths,the rise time (τr) and decay time (τd) are 0.762 s and 1.741 s under 254-nm UV light illumination,respectively.While the τr and τd are 10.709 s and 7.241 s under 365-nm UV light illumination,respectively.The time-dependent (I-t) response (photocurrent in the order of 10-10 A) can be clearly distinguished at a small light intensity of 1 μW.cm-2.The internal physical mechanism affecting the device performances is discussed by the band diagram and charge carrier transfer theory.
文献关键词：
中图分类号：
作者姓名：
Wei-Ming Sun;Bing-Yang Sun;Shan Li;Guo-Liang Ma;Ang Gao;Wei-Yu Jiang;Mao-Lin Zhang;Pei-Gang Li;Zeng Liu;Wei-Hua Tang
作者机构：
Laboratory of Information Functional Materials and Devices,School of Science,Beijing University of Posts and Telecommunications,Beijing 100876,China;College of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023,China;National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies,Nanjing University of Posts and Telecommunications,Nanjing 210023,China
文献出处：
引用格式：
[1]Wei-Ming Sun;Bing-Yang Sun;Shan Li;Guo-Liang Ma;Ang Gao;Wei-Yu Jiang;Mao-Lin Zhang;Pei-Gang Li;Zeng Liu;Wei-Hua Tang-.A broadband self-powered UV photodetector of aβ-Ga2O3/γ-CuI p-n junction)[J].中国物理B（英文版）,2022(02):382-388
A类：
Idark,Iphoto
B类：
broadband,self,powered,UV,photodetector,Ga2O3,CuI,symmetric,Ti,Au,layer,point,electrodes,have,been,successfully,patterned,films,which,prepared,by,metal,organic,chemical,vapor,deposition,MOCVD,spin,coating,fabricated,heterojunction,has,large,open,circuit,voltage,Voc,desired,achieving,operation,Irradiated,ultraviolet,light,when,bias,device,pA,photocurrent,nA,reaches,about,stable,fast,response,speed,different,wavelengths,rise,decay,under,illumination,respectively,While,dependent,order,can,clearly,distinguished,small,intensity,internal,physical,mechanism,affecting,performances,discussed,diagram,charge,carrier,transfer,theory
AB值：
0.547737
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