典型文献
Theoretical analysis on GaAs sub-cell doping concen-tration for triple-junction solar cells irradiated by proton based on TCAD simulation
文献摘要：
The degradation on the GaInP/GaAs/Ge triple-junction solar cells was irradiated by proton,and the solar cells with various GaAs sub-cell doping concentrations are modeled by the technology computer aided design(TCAD)simula-tion.The degradation results of related electrical parameters and external quantum efficiency(EQE)are studied.The degradation mechanism irradiated by proton is discussed.The short-circuit current,maximum power and conversion efficiency decrease with the increasing of GaAs sub-cell doping concentration.When the base doping concentration of GaAs sub-cell is 1×1016 cm-3,the degradation of short-circuit current is less than that of other base doping concentra-tions.Furthermore,under proton irradiation,with the increase of doping concentration of GaAs sub-cell,the open-circuit voltage first increases and then decreases.Meanwhile,when the base doping concentration of GaAs sub-cell is 2×1017 cm-3,the degradation of open-circuit voltage is less than that of other base doping concentrations.The research will provide the basic theories and device simulation method for GaInP/GaAs/Ge triple-junction solar cells radiation damage evaluation study and radiation hardening,and can provide guidance for the production of tri-ple-junction solar cells in orbit.
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作者姓名：
LI Junwei;JIA Weimin;SHI Chengying;WANG Zujun;LI Zhengcao
作者机构：
Key Lab of Advanced Materials(MOE),School of Materials Science and Engineering,Tsinghua University,Beijing 100084,China;Xi'an Research Institute of High-Technology,Xi'an 710025,China;Northwest Institute of Nuclear Technology,Xi'an 710024,China
文献出处：
引用格式：
[1]LI Junwei;JIA Weimin;SHI Chengying;WANG Zujun;LI Zhengcao-.Theoretical analysis on GaAs sub-cell doping concen-tration for triple-junction solar cells irradiated by proton based on TCAD simulation)[J].光电子快报（英文版）,2022(12):723-729
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Theoretical,analysis,GaAs,sub,doping,triple,junction,solar,cells,irradiated,by,proton,TCAD,simulation,degradation,GaInP,Ge,was,various,concentrations,are,modeled,technology,computer,aided,design,results,related,electrical,parameters,external,quantum,efficiency,EQE,studied,mechanism,discussed,short,circuit,current,maximum,power,conversion,increasing,When,less,than,that,other,Furthermore,under,irradiation,open,voltage,first,increases,then,decreases,Meanwhile,when,research,will,provide,basic,theories,device,method,damage,evaluation,study,hardening,can,guidance,production,orbit
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0.384511
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