典型文献
Boosting the performance of crossed ZnO microwire UV photodetector by mechanical contact homo-interface barrier
文献摘要：
One-dimensional(1D)micro/nanowires of wide band gap semiconductors have become one of the most promising blocks of high-performance photodetectors.However,in the axial direction of micro/nanowires,the carriers can transport freely driven by an external electric field,which usually produces large dark current and low detectivity.Here,an UV photodetector built from three cross-intersecting ZnO microwires with double homo-interfaces is demonstrated by the chemical vapor deposition and physical transfer techniques.Compared with the reference device without interface,the dark current of this ZnO double-interface photodetector is significantly reduced by nearly 5 orders of magnitude,while the responsivity decreases slightly,thereby greatly improving the normalized photocurrent-to-dark current ratio.In addition,ZnO double-interface photodetector exhibits a much faster response speed(～0.65 s)than the no-interface device(～95 s).The improved performance is attributed to the potential barriers at the microwire-microwire homo-interfaces,which can regulate the carrier transport.Our findings in this work provide a promising approach for the design and development of high-performance photodetectors.
文献关键词：
中图分类号：
作者姓名：
Yinzhe Liu;Kewei Liu;Jialin Yang;Zhen Cheng;Dongyang Han;Qiu Ai;Xing Chen;Yongxue Zhu;Binghui Li;Lei Liu;Dezhen Shen
作者机构：
State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China
文献出处：
引用格式：
[1]Yinzhe Liu;Kewei Liu;Jialin Yang;Zhen Cheng;Dongyang Han;Qiu Ai;Xing Chen;Yongxue Zhu;Binghui Li;Lei Liu;Dezhen Shen-.Boosting the performance of crossed ZnO microwire UV photodetector by mechanical contact homo-interface barrier)[J].中国物理B（英文版）,2022(10):286-290
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AB值：
0.575765
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