典型文献
A silicon-graphene-silicon transistor with an improved current gain
文献摘要：
In history,semiconductor-metal-semiconductor transistor(SMST)was proposed for frequency improve-ment.However,a general fabrication method is still missing due to the unsolved technological problem of deposition of a general crystalline semiconductor on metal,and a thinner metal base is also difficult to be fabricated with high quality.Recently,due to the atomic thickness of graphene,the concept of semiconductor-graphene-semiconductor transistor(SGST)has emerged which leads to the renaissance of SMST,however the experimental study is in its infancy.In this letter,SMST and SGST are fabricated using Si membrane transfer.It is found the common base current gain can be improved from about 0.5％in a Si-Au-Si transistor to about 1％in a Si-Gr-Ge one,and to above 10％in a Si-Gr-Si one,which is attributed to both the ultra-thin thickness and the quantum capacitance effect of graphene.
文献关键词：
中图分类号：
作者姓名：
Chi Liu;Xu-Qi Yang;Wei Ma;Xin-Zhe Wang;Hai-Yan Jiang;Wen-Cai Ren;Dong-Ming Sun
作者机构：
Shenyang National Laboratory for Materials Science,Institute of Metal Research,Chinese Academy of Sciences,72 Wenhua Road,Shenyang 110016,China;School of Material Science and Engineering,University of Science and Technology of China,72 Wenhua Road,Shenyang 110016,China
文献出处：
引用格式：
[1]Chi Liu;Xu-Qi Yang;Wei Ma;Xin-Zhe Wang;Hai-Yan Jiang;Wen-Cai Ren;Dong-Ming Sun-.A silicon-graphene-silicon transistor with an improved current gain)[J].材料科学技术（英文版）,2022(09):127-130
A类：
SMST,SGST
B类：
silicon,graphene,transistor,improved,current,gain,In,history,semiconductor,metal,was,proposed,frequency,However,general,fabrication,method,still,missing,due,unsolved,technological,problem,deposition,crystalline,thinner,base,also,difficult,be,fabricated,high,quality,Recently,atomic,thickness,concept,has,emerged,which,leads,renaissance,however,experimental,study,its,infancy,this,letter,are,using,Si,membrane,transfer,It,found,common,can,from,about,Au,Gr,Ge,one,above,attributed,both,ultra,quantum,capacitance,effect
AB值：
0.518444
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机标中图分类号，由域田数据科技根据网络公开资料自动分析生成，仅供学习研究参考。
