典型文献
Investigation into the InAs/GaAs quantum dot material epitaxially grown on silicon for O band lasers
文献摘要：
InAs/GaAs quantum dot (QD) lasers were grown on silicon substrates using a thin Ge buffer and three-step growth method in the molecular beam epitaxy (MBE) system.In addition,strained superlattices were used to prevent threading disloca-tions from propagating to the active region of the laser.The as-grown material quality was characterized by the transmission electron microscope,scanning electron microscope,X-ray diffraction,atomic force microscope,and photoluminescence spectro-scopy.The results show that a high-quality GaAs buffer with few dislocations was obtained by the growth scheme we de-veloped.A broad-area edge-emitting laser was also fabricated.The O-band laser exhibited a threshold current density of 540 A/cm2 at room temperature under continuous wave conditions.This work demonstrates the potential of large-scale and low-cost manufacturing of the O-band InAs/GaAs quantum dot lasers on silicon substrates.
文献关键词：
中图分类号：
作者姓名：
Tianyi Tang;Tian Yu;Guanqing Yang;Jiaqian Sun;Wenkang Zhan;Bo Xu;Chao Zhao;Zhanguo Wang
作者机构：
Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices,Beijing 100083,China;College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Science,Beijing 101804,China
文献出处：
引用格式：
[1]Tianyi Tang;Tian Yu;Guanqing Yang;Jiaqian Sun;Wenkang Zhan;Bo Xu;Chao Zhao;Zhanguo Wang-.Investigation into the InAs/GaAs quantum dot material epitaxially grown on silicon for O band lasers)[J].半导体学报（英文版）,2022(01):55-61
A类：
disloca
B类：
Investigation,into,InAs,GaAs,quantum,dot,material,epitaxially,grown,silicon,band,lasers,QD,were,substrates,using,thin,Ge,buffer,three,step,growth,method,molecular,beam,epitaxy,MBE,system,addition,strained,superlattices,used,prevent,threading,from,propagating,active,region,quality,was,characterized,by,transmission,electron,microscope,scanning,ray,diffraction,atomic,force,photoluminescence,spectro,scopy,results,show,that,high,few,dislocations,obtained,scheme,veloped,broad,area,edge,emitting,also,fabricated,exhibited,threshold,current,density,room,temperature,under,continuous,wave,conditions,This,work,demonstrates,potential,large,scale,low,cost,manufacturing
AB值：
0.620071
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