典型文献
InGaAs/InAlAs SAGCMCT avalanche photodiode with high linearity and wide dynamic range
文献摘要：
Linearity is a very important parameter to measure the performance of avalanche photodiodes[APDs]under high input optical power.In this paper,the influence of the absorption layer on the linearity of APDs is carefully studied by using bandgap engineering with the structure model of separated absorption,grading,charge,multiplication,charge,and transit[SAGCMCT].The simulated results show that in the hybrid absorption layer device structure the 1 dB compression point can be improved from-9 dBm to-2.1 dBm by increasing the proportion of the p-type absorption layer.In the device structure with only one absorption layer,increasing the doping level of the absorption layer can also improve the 1 dB compression point from-8.6 dBm to 1.43 dBm at a gain of 10.Therefore,the absorption layer is very critical for the linearity of APDs.
文献关键词：
中图分类号：
作者姓名：
Yu Li;Weifang Yuan;Ke Li;Xiaofeng Duan;Kai Liu;Yongqing Huang
作者机构：
State Key Laboratory of Information Photonics and Optical Communications,Beijing University of Posts and Telecommunications,Beijing 100876,China
文献出处：
引用格式：
[1]Yu Li;Weifang Yuan;Ke Li;Xiaofeng Duan;Kai Liu;Yongqing Huang-.InGaAs/InAlAs SAGCMCT avalanche photodiode with high linearity and wide dynamic range)[J].中国光学快报（英文版）,2022(02):153-159
A类：
SAGCMCT
B类：
InGaAs,InAlAs,avalanche,high,linearity,wide,dynamic,range,Linearity,very,important,parameter,measure,performance,photodiodes,APDs,under,input,optical,power,this,paper,influence,absorption,layer,carefully,studied,by,using,bandgap,engineering,structure,model,separated,grading,charge,multiplication,transit,simulated,results,show,that,hybrid,device,compression,point,can,be,improved,from,dBm,increasing,proportion,type,only,one,doping,level,also,gain,Therefore,critical
AB值：
0.506425
相似文献
机标中图分类号，由域田数据科技根据网络公开资料自动分析生成，仅供学习研究参考。
