Topological crystalline insulator(TCI)SnTe is a potential material for quantum electronic devices because of its attractive inherent sensitivity of band topology and highly mobile characteristic of Dirac fermions.The proximity effect at the interface of SnTe film can affect the topological surface transport and may result in novel quantum magneto-electric effects.Here,we study the magnetoelectrical transport prop-erties of SnTe thin films grown on ferrimagnetic insulators Eu3Fe5O12(110)(EuIG(110))and Y3Fe5O12(111)(YIG(111))single-crystal underlayers by molecular beam epitaxy.Linear magnetic resistance(LMR)is observed in SnTe/EuIG heterostructures in the low field range,which is different from the weak antilo-calization(WAL)characteristic of SnTe/YIG heterostructures.Especially,the double carrier characteristic with the coexistence of holes and electrons in SnTe/EuIG heterostructure is quite different from the holes as main carriers in SnTe/YIG,although the SnTe layer remains the same crystal plane(100)in the two heterostructures.The LMR in SnTe/EuIG is attributed to the topological surface Dirac electrons and disor-dered domain distribution in the SnTe layer which is in sharp contrast to the WAL of SnTe/YIG with or-dered domain distribution in the SnTe layer.The present studies of transport properties not only provide a fundamental understanding of the transport mechanism of TCI and magnetite insulator heterostructure but also display the promising application probability for tunable topological electronic devices.

Anqi Zhang;Daheng Liu;Teng Yang;Song Ma;Zhidong Zhang

Shenyang National Laboratory for Materials Science,Institute of Metal Research,Chinese Academy of Sciences,Shenyang 110016,China;School of Materials Science and Engineering,University of Science and Technology of China,Shenyang 110016,China

材料科学技术（英文版）

[1]Anqi Zhang;Daheng Liu;Teng Yang;Song Ma;Zhidong Zhang-.Transport property of topological crystalline insulator SnTe(100)and ferrimagnetic insulator heterostructures)[J].材料科学技术（英文版）,2022(36):204-211

magnetoelectrical,Eu3Fe5O12,EuIG,underlayers,antilo

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