典型文献
High-performance polarization-sensitive photodetectors on two-dimensional β-InSe
文献摘要：
Two-dimensional(2D)indium selenide(InSe)has been widely studied for application in transistors and photodetectors,which benefit from its excellent optoelectronic properties.Among the three specific polytypes(γ-,ε-and β-phase)of InSe,only the crystal lattice of InSe in β-phase(β-InSe)belongs to a non-symmetry point group of D46h,which indicates stronger anisotropic transport behavior and potential in the polarized photodetection of β-InSe-based optoelectronic devices.Therefore,we prepare the stable p-type 2D-layered β-InSe via temperature gradient method.The anisotropic Raman,transport and photoresponse properties of β-InSe have been experimentally and theoretically proven,showing that theβ-InSe-based device has a ratio of 3.76 for the maximum to minimum dark current at two orthogonal orientations and a high photocurrent anisotropic ratio of 0.70 at 1 V bias voltage,respectively.The appealing anisotropic properties demonstrated in this work clearly identify β-InSe as a competitive candidate for filter-free polarization-sensitive photodetectors.
文献关键词：
中图分类号：
作者姓名：
Zhinan Guo;Rui Cao;Huide Wang;Xi Zhang;Fanxu Meng;Xue Chen;Siyan Gao;David K.Sang;Thi Huong Nguyen;Anh Tuan Duong;Jinlai Zhao;Yu-Jia Zeng;Sunglae Cho;Bing Zhao;Ping-Heng Tan;Han Zhang;Dianyuan Fan
作者机构：
Institute of Microscale Optoelectronics,International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology,College of Physics and Optoelectronic Engineering,Shenzhen University,Shenzhen 518060,China;Institute of Nanosurface Science and Engineering,Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics Engineering,Shenzhen University,Shenzhen 518060,China;State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Department of Physics and Energy Harvest-Storage Research Center,University of Ulsan,Ulsan 680-749,South Korea;State Key Laboratory of Supramolecular Structure and Materials,Jilin University,Changchun 130012,China
文献出处：
引用格式：
[1]Zhinan Guo;Rui Cao;Huide Wang;Xi Zhang;Fanxu Meng;Xue Chen;Siyan Gao;David K.Sang;Thi Huong Nguyen;Anh Tuan Duong;Jinlai Zhao;Yu-Jia Zeng;Sunglae Cho;Bing Zhao;Ping-Heng Tan;Han Zhang;Dianyuan Fan-.High-performance polarization-sensitive photodetectors on two-dimensional β-InSe)[J].国家科学评论（英文版）,2022(05):25-31
A类：
polytypes,D46h
B类：
High,performance,polarization,sensitive,photodetectors,two,dimensional,InSe,Two,2D,indium,selenide,been,widely,studied,application,transistors,which,benefit,from,its,excellent,optoelectronic,properties,Among,three,specific,phase,only,crystal,lattice,belongs,symmetry,point,group,indicates,stronger,anisotropic,transport,behavior,potential,polarized,photodetection,devices,Therefore,we,prepare,stable,layered,via,temperature,gradient,method,Raman,photoresponse,have,experimentally,theoretically,proven,showing,that,ratio,maximum,minimum,dark,orthogonal,orientations,high,photocurrent,bias,voltage,respectively,appealing,demonstrated,this,work,clearly,identify,competitive,candidate,filter,free
AB值：
0.578066
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机标中图分类号，由域田数据科技根据网络公开资料自动分析生成，仅供学习研究参考。
