典型文献
Graphene-based heterojunction for enhanced photodetectors
文献摘要:
Graphene has high light transmittance of 97.7%and ultrafast carrier mobility,which means it has attracted widespread attention in two-dimensional materials.However,the optical absorptivity of single-layer graphene is only 2.3%,and the corresponding photoresponsivity is difficult to produce at normal light irradiation.And the low on-off ratio resulting from the zero bandgap makes it unsuitable for many electronic devices,hindering potential development.The graphene-based heterojunction composed of graphene and other materials has outstanding optical and electrical properties,which can mutu-ally modify the defects of both the graphene and material making it then suitable for optoelectronic devices.In this review,the advantages of graphene-based heterojunctions in the enhancement of the performance of photodetectors are reviewed.Firstly,we focus on the photocurrent generation mechanism of a graphene-based heterojunction photodetector,especially photovoltaic,photoconduction and photogating effects.Secondly,the classification of graphene-based heterojunctions in different directions is summarized.Meanwhile,the latest research progress of graphene-transition metal dichalcogenide(TMD)heterojunction photodetectors with excellent performance in graphene-based heterostructures is introduced.Finally,the difficulties faced by the existing technologies of graphene-based photodetectors are discussed,and further prospects are proposed.
文献关键词:
中图分类号:
作者姓名:
Haiting Yao;Xin Guo;Aida Bao;Haiyang Mao;Youchun Ma;Xuechao Li
作者机构:
National Key Laboratory for Electronic Measurement Technology,North University of China,Taiyuan 030051,China;Institute of Microelectronics of Chinese Academy of Sciences,Beijing 100029,China
文献出处:
引用格式:
[1]Haiting Yao;Xin Guo;Aida Bao;Haiyang Mao;Youchun Ma;Xuechao Li-.Graphene-based heterojunction for enhanced photodetectors)[J].中国物理B(英文版),2022(03):106-118
A类:
mutu,photoconduction
B类:
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AB值:
0.57294
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