首站-论文投稿智能助手
典型文献
An oxide-based heterojunction optoelectronic synaptic device with wideband and rapid response performance
文献摘要:
With the rapid development of science and technology,the emergence of new application scenarios,such as robots,driverless vehicles and smart city,puts forward high requirements for artificial visual systems.Optoelectronic synaptic devices have attracted much attention due to their advantages in sensing,mem-ory and computing integration.In this work,via band structure engineering and heterostructure design-ing,a heterojunction optoelectronic synaptic device based on Cu doped with n-type SrTiO3(Cu:STO)film combined with p-type CuAlO2(CAO)thin film was fabricated.It is found surprisingly that the optoelec-tronic device based on Cu:STO/CAO p-n heterojunction exhibits a rapid response of 2 ms,and that it has a wideband response from visible to near-infrared(NIR)region.Additionally,a series of important synaptic functions,including excitatory postsynaptic current(EPSC),paired-pulse facilitation(PPF),short-term potentiation(STP)to long-term potentiation(LTP)transition,learning experience behavior and im-age sharpening,have been successfully simulated on the device.More importantly,the performance of the device remains still stable and reliable after several months which were stored at room temperature and atmospheric pressure.Based on these advantages,the optoelectronic synaptic devices demonstrated here provide great potential in the new generation of artificial visual systems.
文献关键词:
作者姓名:
Chunmei Li;Jinyong Wang;Dongyang Li;Nasir Ilyas;Zhiqiang Yang;Kexin Chen;Peng Gu;Xiangdong Jiang;Deen Gu;Fucai Liu;Yadong Jiang;Wei Li
作者机构:
School of Optoelectronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu 611731,China;Key Laboratory of Information Materials of Sichuan Province and School of Preparatory Education,Southwest Minzu University,Chengdu 610041,China;State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 611731,China
引用格式:
[1]Chunmei Li;Jinyong Wang;Dongyang Li;Nasir Ilyas;Zhiqiang Yang;Kexin Chen;Peng Gu;Xiangdong Jiang;Deen Gu;Fucai Liu;Yadong Jiang;Wei Li-.An oxide-based heterojunction optoelectronic synaptic device with wideband and rapid response performance)[J].材料科学技术(英文版),2022(28):159-167
A类:
B类:
An,oxide,heterojunction,optoelectronic,wideband,rapid,response,performance,With,development,science,technology,emergence,new,application,scenarios,such,robots,driverless,vehicles,smart,city,puts,forward,high,requirements,artificial,visual,systems,Optoelectronic,devices,have,attracted,much,attention,due,their,advantages,sensing,mem,computing,integration,In,this,work,via,engineering,heterostructure,design,doped,type,SrTiO3,STO,film,combined,CuAlO2,CAO,thin,was,fabricated,It,found,surprisingly,that,exhibits,has,from,visible,near,infrared,NIR,region,Additionally,series,functions,including,excitatory,postsynaptic,current,EPSC,paired,pulse,facilitation,PPF,short,term,potentiation,STP,long,LTP,transition,learning,experience,behavior,sharpening,been,successfully,simulated,More,importantly,remains,still,stable,reliable,after,several,months,which,were,stored,room,temperature,atmospheric,pressure,Based,these,demonstrated,here,provide,great,potential,generation
AB值:
0.638171
相似文献
High-performance polarization-sensitive photodetectors on two-dimensional β-InSe
Zhinan Guo;Rui Cao;Huide Wang;Xi Zhang;Fanxu Meng;Xue Chen;Siyan Gao;David K.Sang;Thi Huong Nguyen;Anh Tuan Duong;Jinlai Zhao;Yu-Jia Zeng;Sunglae Cho;Bing Zhao;Ping-Heng Tan;Han Zhang;Dianyuan Fan-Institute of Microscale Optoelectronics,International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology,College of Physics and Optoelectronic Engineering,Shenzhen University,Shenzhen 518060,China;Institute of Nanosurface Science and Engineering,Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics Engineering,Shenzhen University,Shenzhen 518060,China;State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Department of Physics and Energy Harvest-Storage Research Center,University of Ulsan,Ulsan 680-749,South Korea;State Key Laboratory of Supramolecular Structure and Materials,Jilin University,Changchun 130012,China
Light-emitting field-effect transistors with EQE over 20% enabled by a dielectric-quantum dots-dielectric sandwich structure
Lingmei Kong;Jialong Wu;Yunguo Li;Fan Cao;Feijiu Wang;Qianqian Wu;Piaoyang Shen;Chengxi Zhang;Yun Luo;Lin Wang;Lyudmila Turyanska;Xingwei Ding;Jianhua Zhang;Yongbiao Zhao;Xuyong Yang-Key Laboratory of Advanced Display and System Applications of Ministry of Education,Shanghai University,Shanghai 200072,China;CAS Key Laboratory of Crust-Mantle Materials and Environments,School of Earth and Space Sciences,University of Science and Technology of China,Hefei 230026,China;Henan Key Laboratory of Photovoltaic Materials,Henan University,Kaifeng 475004,China;Faculty of Engineering,University of Nottingham,Nottingham NG72RD,UK;Center for Optoelectronic Engineering Research,Department of Physics,School of Physics and Astronomy,Yunnan University,Kunming 650091,China
Zeolitic imidazolate framework-67 derived Al-Co-S hierarchical sheets bridged by nitrogen-doped graphene:Incorporation of PANI derived carbon nanorods for solid-state asymmetric supercapacitors
Emad S.Goda;Bidhan Pandit;Sang Eun Hong;Bal Sydulu Singu;Seong K.Kim;Essam B.Moustafa;Kuk Ro Yoon-Organic Nanomaterials Lab,Department of Chemistry,Hannam University,Daejeon 34054,Republic of Korea;Gas Analysis and Fire Safety Laboratory,Chemistry Division,National Institute for Standards,136,Giza 12211,Egypt;Department of Materials Science and Engineering and Chemical Engineering,Universidad Carlos Ⅲ de Madrid,Avenida de La Universidad 30,28911 Leganés,Madrid,Spain;Department of Chemical and Biomolecular Engineering,Yonsei University,Seoul 03722,Republic of Korea;Department of Chemical Engineering,Hannam University,1646 Yuseongdae-ro,Yuseong-gu,Daejeon 34054,Republic of Korea;Mechanical Engineering Department,Faculty of Engineering,King Abdulaziz University,P.O.Box 80204,Jeddah 22254,Saudi Arabia
机标中图分类号,由域田数据科技根据网络公开资料自动分析生成,仅供学习研究参考。