典型文献
An oxide-based heterojunction optoelectronic synaptic device with wideband and rapid response performance
文献摘要:
With the rapid development of science and technology,the emergence of new application scenarios,such as robots,driverless vehicles and smart city,puts forward high requirements for artificial visual systems.Optoelectronic synaptic devices have attracted much attention due to their advantages in sensing,mem-ory and computing integration.In this work,via band structure engineering and heterostructure design-ing,a heterojunction optoelectronic synaptic device based on Cu doped with n-type SrTiO3(Cu:STO)film combined with p-type CuAlO2(CAO)thin film was fabricated.It is found surprisingly that the optoelec-tronic device based on Cu:STO/CAO p-n heterojunction exhibits a rapid response of 2 ms,and that it has a wideband response from visible to near-infrared(NIR)region.Additionally,a series of important synaptic functions,including excitatory postsynaptic current(EPSC),paired-pulse facilitation(PPF),short-term potentiation(STP)to long-term potentiation(LTP)transition,learning experience behavior and im-age sharpening,have been successfully simulated on the device.More importantly,the performance of the device remains still stable and reliable after several months which were stored at room temperature and atmospheric pressure.Based on these advantages,the optoelectronic synaptic devices demonstrated here provide great potential in the new generation of artificial visual systems.
文献关键词:
中图分类号:
作者姓名:
Chunmei Li;Jinyong Wang;Dongyang Li;Nasir Ilyas;Zhiqiang Yang;Kexin Chen;Peng Gu;Xiangdong Jiang;Deen Gu;Fucai Liu;Yadong Jiang;Wei Li
作者机构:
School of Optoelectronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu 611731,China;Key Laboratory of Information Materials of Sichuan Province and School of Preparatory Education,Southwest Minzu University,Chengdu 610041,China;State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 611731,China
文献出处:
引用格式:
[1]Chunmei Li;Jinyong Wang;Dongyang Li;Nasir Ilyas;Zhiqiang Yang;Kexin Chen;Peng Gu;Xiangdong Jiang;Deen Gu;Fucai Liu;Yadong Jiang;Wei Li-.An oxide-based heterojunction optoelectronic synaptic device with wideband and rapid response performance)[J].材料科学技术(英文版),2022(28):159-167
A类:
B类:
An,oxide,heterojunction,optoelectronic,wideband,rapid,response,performance,With,development,science,technology,emergence,new,application,scenarios,such,robots,driverless,vehicles,smart,city,puts,forward,high,requirements,artificial,visual,systems,Optoelectronic,devices,have,attracted,much,attention,due,their,advantages,sensing,mem,computing,integration,In,this,work,via,engineering,heterostructure,design,doped,type,SrTiO3,STO,film,combined,CuAlO2,CAO,thin,was,fabricated,It,found,surprisingly,that,exhibits,has,from,visible,near,infrared,NIR,region,Additionally,series,functions,including,excitatory,postsynaptic,current,EPSC,paired,pulse,facilitation,PPF,short,term,potentiation,STP,long,LTP,transition,learning,experience,behavior,sharpening,been,successfully,simulated,More,importantly,remains,still,stable,reliable,after,several,months,which,were,stored,room,temperature,atmospheric,pressure,Based,these,demonstrated,here,provide,great,potential,generation
AB值:
0.638171
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