典型文献
"Clean"doping to advance 2D material phototransistors
文献摘要:
Doping is an essential element to develop next-generation electronic and optoelectronic devices and has to break the limit of specific steps during material synthesis and device fabrication.Here the authors reveal"clean"doping to enhance the electric and photoelectric performance of two-dimensional(2D)indium selenide(InSe)via a neutron-transmutation method for the first time,even after device fabrication.
文献关键词:
中图分类号:
作者姓名:
Zhen Wang;Peng Wang;Weida Hu
作者机构:
State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,200083 Shanghai,China
文献出处:
引用格式:
[1]Zhen Wang;Peng Wang;Weida Hu-."Clean"doping to advance 2D material phototransistors)[J].光:科学与应用(英文版),2022(07):1322-1323
A类:
transmutation
B类:
Clean,doping,advance,2D,material,phototransistors,Doping,essential,element,develop,next,generation,optoelectronic,devices,has,break,limit,specific,steps,during,synthesis,fabrication,Here,authors,reveal,clean,enhance,photoelectric,performance,two,dimensional,indium,selenide,InSe,via,neutron,method,first,even,after
AB值:
0.692553
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