Resistive Random-Access Memory(RRAM)devices are recognized as potential candidates for next-generation memory devices,due to their smallest cell size,high write/erase speed,and endurance.Particularly,the resis-tive switching(RS)characteristics in oxide materials have offered new opportunities for developing CMOS-compatible high-density RRAM devices.In this study,the RS behavior of HfAlOx/ZrO2 thin films sandwiched structure between TiN bottom electrode and Au top electrodes were investigated.It was found that Au/HfAlOx/ZrO2/TiN stacks were superior in terms of RS performance when compare to Au/HfAlOx/TiN memory stacks.The devices demonstrated a good resistance ratio of high resistance state and low resistance state～103 for Au/HfA1Ox/TiN and～105 for Au/HfAlOx/ZrO2/TiN stacks,respectively.Both stacks showed good retention char-acteristics(＞104 s)and endurance(＞103 cycles).The experimental current-voltage characteristics fitted with different conducting mechanisms,the linear lower bias region is dominated by ohmic conductivity,whereas the non-linear higher bias region was dominated by space-charge limited current conduction mechanism.

P.R.Sekhar Reddy;Venkata Raveendra Nallagatla;Yedluri Anil Kumar;G.Murali

School of Material Science and Engineering Pusan National University,2 Busandaehak-ro 63 Beon-gil,Guemjeong-gu,Busan,46241,Republic of Korea;Department of Physics and Oxide Research Centre,Memory and Catalyst Research Center,Hankuk University of Foreign Studies,Yongin,17035,South Korea;Materials Center Leoben Forschung GmbH,Roseggerstrasse 12,Leoben,8700,Austria;Department of Physics,United Arab Emirates University,AI Ain,15551,United Arab Emirates;Department of Polymer Science and Engineering Department of IT-Energy Convergence(BK21 FOUR),Chemical Industry Institute,Korea National University of Transportation,Chungju,27469,Republic of Korea

自然科学进展·国际材料（英文）

[1]P.R.Sekhar Reddy;Venkata Raveendra Nallagatla;Yedluri Anil Kumar;G.Murali-.Enhanced resistive switching properties of HfAlOx/ZrO2-based RRAM devices)[J].自然科学进展·国际材料（英文）,2022(05):602-607

HfAlOx,HfA1Ox

Enhanced,resistive,switching,properties,ZrO2,RRAM,devices,Resistive,Random,Access,Memory,recognized,potential,candidates,next,generation,memory,due,their,smallest,cell,size,write,erase,speed,endurance,Particularly,RS,characteristics,oxide,materials,have,offered,new,opportunities,developing,CMOS,compatible,density,In,this,study,behavior,thin,films,sandwiched,structure,between,TiN,bottom,Au,top,electrodes,were,investigated,It,was,found,that,stacks,superior,terms,performance,when,compare,demonstrated,good,resistance,state,respectively,Both,showed,retention,cycles,experimental,current,voltage,fitted,different,conducting,mechanisms,linear,lower,bias,region,dominated,by,ohmic,conductivity,whereas,higher,space,charge,limited,conduction

0.553369