典型文献
Uniform,fast,and reliable CMOS compatible resistive switching memory
文献摘要：
Resistive switching random access memory(RRAM)is considered as one of the potential candidates for next-genera-tion memory.However,obtaining an RRAM device with comprehensively excellent performance,such as high retention and en-durance,low variations,as well as CMOS compatibility,etc.,is still an open question.In this work,we introduce an insert TaOx layer into HfOx-based RRAM to optimize the device performance.Attributing to robust filament formed in the TaOx layer by a forming operation,the local-field and thermal enhanced effect and interface modulation has been implemented simultan-eously.Consequently,the RRAM device features large windows(＞103),fast switching speed(～10 ns),steady retention(＞72 h),high endurance(＞108 cycles),and excellent uniformity of both cycle-to-cycle and device-to-device.These results indicate that inserting the TaOx layer can significantly improve HfOx-based device performance,providing a constructive approach for the practical application of RRAM.
文献关键词：
中图分类号：
作者姓名：
Yunxia Hao;Ying Zhang;Zuheng Wu;Xumeng Zhang;Tuo Shi;Yongzhou Wang;Jiaxue Zhu;Rui Wang;Yan Wang;Qi Liu
作者机构：
Key Laboratory of Microelectronic Devices&Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;University of Chinese Academy of Sciences,Beijing 100049,China;School of Integrated Circuits,Anhui University,Hefei 230601,China;Frontier Institute of Chip and System,Fudan University,Shanghai 200433,China
文献出处：
引用格式：
[1]Yunxia Hao;Ying Zhang;Zuheng Wu;Xumeng Zhang;Tuo Shi;Yongzhou Wang;Jiaxue Zhu;Rui Wang;Yan Wang;Qi Liu-.Uniform,fast,and reliable CMOS compatible resistive switching memory)[J].半导体学报（英文版）,2022(05):87-93
A类：
durance,TaOx,HfOx
B类：
Uniform,fast,reliable,CMOS,compatible,resistive,switching,memory,Resistive,random,access,RRAM,considered,one,potential,candidates,next,genera,However,obtaining,device,comprehensively,excellent,performance,such,high,retention,low,variations,well,compatibility,etc,still,open,question,In,this,work,introduce,layer,into,optimize,Attributing,robust,filament,formed,by,forming,operation,local,field,thermal,enhanced,effect,interface,modulation,has,been,implemented,simultan,eously,Consequently,features,large,windows,speed,steady,endurance,cycles,uniformity,both,These,results,indicate,that,inserting,significantly,improve,providing,constructive,approach,practical,application
AB值：
0.578093
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机标中图分类号，由域田数据科技根据网络公开资料自动分析生成，仅供学习研究参考。
