典型文献
Demonstration of synaptic and resistive switching characteristics in W/TiO2/HfO2/TaN memristor crossbar array for bioinspired neuromorphic computing
文献摘要：
In this study,resistive random-access memory (RRAM)-based crossbar arrays with a memristor W/TiO2/HfO2/TaN structure were fabricated through atomic layer deposition (ALD) to investigate synap-tic plasticity and resistive switching (RS) characteristics for bioinspired neummorphic computing.X-ray photoelectron spectroscopy (XPS) was employed to explore oxygen vacancy concentrations in bilayer TiO2/HfO2 films.Gaussian fitting for O1s peaks confirmed that the HfO2 layer contained a larger num-ber of oxygen vacancies than the TiO2 layer.In addition,HfO2 had lower Gibbs free energy (AG°=-1010.8 kJ/mol) than the TiO2 layer (ΔG°=-924.0 kJ/mol),resulting in more oxygen vacancies in the HfO2 layer.XPS results and AG° magnitudes confirmed that formation/disruption of oxygen-based conductive filaments took place in the TiO2 layer.The W/TiO2/HfO2/TaN memristive device exhibited excellent and repeatable RS characteristics,including superb 103 dc switching cycles,outstanding 107 pulse endurance,and high-thermal stability (104 s at 125 ℃) important for digital computing systems.Furthermore,some essential biological synaptic characteristics such as potentiation-depression plasticity,paired-pulse facil-itation (PPF),and spike-timing-dependent plasticity (STDP,asymmetric Hebbian and asymmetric anti-Hebbian) were successfully mimicked herein using the crossbar-array memristive device.Based on exper-imental results,a migration and diffusion of oxygen vacancy based physical model is proposed to describe the synaptic plasticity and RS mechanism.This study demonstrates that the proposed W/TiO2/HfO2/TaN memristor crossbar-array has a significant potential for applications in non-volatile memory (NVM) and bioinspired neuromorphic systems.
文献关键词：
中图分类号：
作者姓名：
Muhammad Ismail;Umesh Chand;Chandreswar Mahata;Jamel Nebhen;Sungjun Kim
作者机构：
Division of Electronics and Electrical Engineering,Dongguk University,Seoul 04620,South Korea;Department of Electrical and Computer Engineering,National University Singapore,Singapore 117583,Singapore;College of Computer Engineering and Sciences,Prince Sattam bin Abdulaziz University,Al-Kharj 11942,Saudi Arabia
文献出处：
引用格式：
[1]Muhammad Ismail;Umesh Chand;Chandreswar Mahata;Jamel Nebhen;Sungjun Kim-.Demonstration of synaptic and resistive switching characteristics in W/TiO2/HfO2/TaN memristor crossbar array for bioinspired neuromorphic computing)[J].材料科学技术（英文版）,2022(01):94-102
A类：
synap,neummorphic,Hebbian
B类：
Demonstration,synaptic,resistive,switching,characteristics,TiO2,HfO2,TaN,memristor,crossbar,bioinspired,neuromorphic,computing,In,this,study,random,access,memory,RRAM,arrays,structure,were,fabricated,through,atomic,deposition,ALD,investigate,plasticity,RS,photoelectron,spectroscopy,XPS,was,employed,explore,oxygen,vacancy,concentrations,bilayer,films,Gaussian,fitting,O1s,peaks,confirmed,that,contained,larger,num,ber,vacancies,than,addition,had,lower,Gibbs,free,energy,AG,kJ,resulting,results,magnitudes,formation,disruption,conductive,filaments,took,place,memristive,device,exhibited,excellent,repeatable,including,superb,dc,cycles,outstanding,pulse,endurance,high,thermal,stability,important,digital,systems,Furthermore,some,essential,biological,such,potentiation,depression,paired,facil,itation,PPF,spike,timing,dependent,STDP,asymmetric,anti,successfully,mimicked,herein,using,Based,exper,imental,migration,diffusion,physical,model,proposed,describe,mechanism,This,demonstrates,has,significant,potential,applications,volatile,NVM
AB值：
0.546553
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