典型文献
Optimization of recess-free AlGaN/GaN Schottky barrier diode by TiN anode and current transport mechanism analysis
文献摘要：
In this work,the optimization of reverse leakage current(IR)and turn-on voltage(VT)in recess-free AlGaN/GaN Schot-tky barrier diodes(SBDs)was achieved by substituting the Ni/Au anode with TiN anode.To explain this phenomenon,the cur-rent transport mechanism was investigated by temperature-dependent current-voltage(Ⅰ-Ⅴ)characteristics.For forward bias,the current is dominated by the thermionic emission(TE)mechanisms for both devices.Besides,the presence of inhomogen-eity of the Schottky barrier height(qφb)is proved by the linear relationship between qφb and ideality factor.For reverse bias,the current is dominated by two different mechanisms at high temperature and low temperature,respectively.At high temperat-ures,the Poole-Frenkel emission(PFE)induced by nitrogen-vacancy(VN)is responsible for the high IR in Ni/Au anode.For TiN an-ode,the IR is dominated by the PFE from threading dislocation(TD),which can be attributed to the decrease of VN due to the suppression of N diffusion at the interface of Schottky contact.At low temperatures,the IR of both diodes is dominated by Fowl-er-Nordheim(FN)tunneling.However,the VN donor enhances the electric field in the barrier layer,thus causing a higher IR in Ni/Au anode than TiN anode,as confirmed by the modified FN model.
文献关键词：
中图分类号：
作者姓名：
Hao Wu;Xuanwu Kang;Yingkui Zheng;Ke Wei;Lin Zhang;Xinyu Liu;Guoqi Zhang
作者机构：
The Institute of Future Lighting,Academy for Engineering and Technology,Fudan University(FAET),Shanghai 200433,China;Institute of Microelectronics of the Chinese Academy of Sciences,Beijing 100029,China;Beijing Const-Intellectual Core Technology Co.Ltd,Beijing 100029,China
文献出处：
引用格式：
[1]Hao Wu;Xuanwu Kang;Yingkui Zheng;Ke Wei;Lin Zhang;Xinyu Liu;Guoqi Zhang-.Optimization of recess-free AlGaN/GaN Schottky barrier diode by TiN anode and current transport mechanism analysis)[J].半导体学报（英文版）,2022(06):67-74
A类：
Schot,tky,SBDs,inhomogen,eity,ideality,Poole
B类：
Optimization,recess,free,AlGaN,Schottky,barrier,by,TiN,anode,current,transport,analysis,In,this,work,optimization,reverse,leakage,turn,voltage,VT,diodes,was,achieved,substituting,Au,To,explain,phenomenon,investigated,dependent,characteristics,For,forward,bias,dominated,thermionic,emission,TE,mechanisms,both,devices,Besides,presence,height,proved,linear,relationship,between,two,different,low,respectively,At,Frenkel,PFE,induced,nitrogen,vacancy,VN,responsible,from,threading,dislocation,TD,which,attributed,decrease,due,suppression,diffusion,interface,contact,temperatures,Fowl,Nordheim,FN,tunneling,However,donor,enhances,electric,field,layer,thus,causing,higher,than,confirmed,modified,model
AB值：
0.437929
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