The absence of efficient red-emitting micrometer-scale light emitting diodes(LEDs),i.e.,LEDs with lateral di-mensions of 1 pm or less is a major barrier to the adoption of microLEDs in virtual/augmented reality.The underlying challenges include the presence of extensive defects and dislocations for indium-rich InGaN quantum wells,strain-induced quantum-confined Stark effect,and etch-induced surface damage during the fabrication of quantum well microLEDs.Here,we demonstrate a new approach to achieve strong red emission(＞620 nm)from dislocation-free N-polar InGaN/GaN nanowires that included an InGaN/GaN short-period superlattice under-neath the active region to relax strain and incorporate more indium within the InGaN dot active region.The resulting submicrometer-scale devices show red electroluminescence dominantly from an InGaN dot active region at low-to-moderate injection currents.A peak external quantum efficiency and a wall-plug efficiency of 2.2％and 1.7％were measured,respectively,which,to the best of our knowledge,are the highest values reported for a submicrometer-scale red LED.This study offers a new path to overcome the efficiency bottleneck of red-emitting microLEDs for a broad range of applications including mobile displays,wearable electronics,biomedical sensing,ultrahigh speed optical interconnect,and virtual/augmented reality.

A.PANDEY;J.MIN;Y.MALHOTRA;M.REDDEPPA;Y.XIAO;Y.WU;Z.MI

Department of Electrical Engineering and Computer Science,University of Michigan,Ann Arbor,Michigan 48109,USA

光子学研究（英文）

[1]A.PANDEY;J.MIN;Y.MALHOTRA;M.REDDEPPA;Y.XIAO;Y.WU;Z.MI-.Strain-engineered N-polar InGaN nanowires:towards high-efficiency red LEDs on the micrometer scale)[J].光子学研究（英文）,2022(12):2809-2815

microLEDs,neath

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