典型文献
Ultrahigh detectivity,high-speed and low-dark current AlGaN solar-blind heterojunction field-effect phototransistors realized using dual-float-photogating effect
文献摘要：
High detectivity is essential for solar-blind deep-ultraviolet(DUV)light detection because the DUV signal is extremely weak in most applications.In this work,we report ultrahigh-detectivity AlGaN-based solar-blind het-erojunction-field-effect phototransistors fabricated utilizing dual-float-photogating effect.The p+-Al0.4GaN layer and Al0.4GaN absorber layer deposited on the Al0.6GaN barrier serve as top pin-junction photogate,while the thin Al0.4GaN channel layer with a strong polarization field inside acts as virtual back photogate.Due to the effective depletion of the two-dimensional electron gas at the Al0.6 Ga0.4 N/Al0.4 Ga0.6 N heterointerface by the top photo-gate,the dark current was suppressed below 2 pA in the bias range of 0 to 10 V.A high photo-to-dark current ratio over 108 and an optical gain of 7.5 x 104 were demonstrated at a bias of 5 V.Theoretical analysis indicates that the optical gain can be attributed to the joint action of the floating top and back photogates on the channel current.As a result,a record high flicker noise(Johnson and shot noise)limited specific detectivity of 2.84×1015(2.91×1017)cm Hz0.5 W-1 was obtained.Furthermore,high response speed at the microsecond level was also shown in the devices.This work provides a promising and feasible approach for high-sensitivity DUV detection.
文献关键词：
中图分类号：
作者姓名：
KAI WANG;XINJIA QIU;ZESHENG LV;ZHIYUAN SONG;HAO JIANG
作者机构：
School of Electronics and Information Technology,Sun Yat-sen University,Guangzhou 510275,China;State Key Laboratory of Optoelectronic Materials and Technologies,Sun Yat-sen University,Guangzhou 510275,China;Guangdong Engineering Technology R&D Center of Compound Semiconductors and Devices,Sun Yat-sen University,Guangzhou 510275,China
文献出处：
引用格式：
[1]KAI WANG;XINJIA QIU;ZESHENG LV;ZHIYUAN SONG;HAO JIANG-.Ultrahigh detectivity,high-speed and low-dark current AlGaN solar-blind heterojunction field-effect phototransistors realized using dual-float-photogating effect)[J].光子学研究（英文）,2022(01):111-119
A类：
4GaN,6GaN,photogate,photogates
B类：
Ultrahigh,detectivity,speed,dark,current,AlGaN,solar,blind,heterojunction,field,phototransistors,realized,using,dual,photogating,High,essential,deep,ultraviolet,DUV,light,detection,because,signal,extremely,weak,most,applications,In,this,work,report,ultrahigh,fabricated,utilizing,p+,Al0,layer,absorber,deposited,barrier,serve,top,pin,while,thin,channel,strong,polarization,inside,acts,virtual,back,Due,effective,depletion,two,dimensional,electron,gas,Ga0,heterointerface,by,was,suppressed,below,pA,bias,range,ratio,over,optical,gain,were,demonstrated,Theoretical,analysis,indicates,that,can,attributed,joint,action,floating,result,record,flicker,noise,Johnson,shot,limited,specific,Hz0,obtained,Furthermore,response,microsecond,level,also,shown,devices,This,provides,promising,feasible,approach,sensitivity
AB值：
0.507655
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