Semipolar Ⅲ-nitrides have attracted increasing attention in applications of optoelectronic devices due to the much reduced polarization field.A high-quality semipolar AlN template is the building block of semipolar AlGaN-based deep-ultraviolet light emitting diodes(DUV LEDs),and thus deserves special attention.In this work,a multi-step in situ interface modification technique is developed for the first time,to our knowledge,to achieve high-quality semipolar AlN templates.The stacking faults were efficiently blocked due to the modi-fication of atomic configurations at the related interfaces.Coherently regrown AlGaN layers were obtained on the in situ treated AlN template,and stacking faults were eliminated in the post-grown AlGaN layers.The strains between AlGaN layers were relaxed through a dislocation glide in the basal plane and misfit dislocations at the heterointerfaces.In contrast,high-temperature ex situ annealing shows great improvement in defect annihilation,yet suffers from severe lattice distortion with strong compressive strain in the AlN template,which is unfavorable to the post-grown AlGaN layers.The strong enhancement of luminous intensity is achieved in in situ treated AlGaN DUV LEDs.The in situ interface modification technique proposed in this work is proven to be an efficient method for the preparation of high-quality semipolar AlN,showing great potential towards the realization of high-efficiency optoelectronic devices.

LI CHEN;JIE SUN;WEI GUO;JASON HOO;WEI LIN;HANGYANG CHEN;HOUQIANG XU;LONG YAN;SHIPING GUO;JUNYONG KANG;JICHUN YE

Zhejiang Engineering Research Center for Energy Optoelectronic Materials and Devices,Ningbo Institute of Materials Technology and Engineering,Chinese Academy of Sciences,Ningbo 315201,China;Yongjiang Laboratory,Ningbo 315201,China;Advanced Micro-Fabrication Equipment Inc.,Shanghai 201201,China;Department of Physics,Xiamen University,Xiamen 361005,China;University of Chinese Academy of Sciences,Beijing 100049,China

光子学研究（英文）

[1]LI CHEN;JIE SUN;WEI GUO;JASON HOO;WEI LIN;HANGYANG CHEN;HOUQIANG XU;LONG YAN;SHIPING GUO;JUNYONG KANG;JICHUN YE-.Multi-step in situ interface modification method for emission enhancement in semipolar deep-ultraviolet light emitting diodes)[J].光子学研究（英文）,2022(12):2778-2785

semipolar,Semipolar,Coherently

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