Strain engineering is a promising method for tuning the electronic properties of two-dimensional (2D)materials,which are capable of sustaining enormous strain thanks to their atomic thinness.However,applying a large and homogeneous strain on these 2D materials,including the typical semiconductor MoS2,remains cumbersome.Here we report a facile strategy for the fabrication of highly strained MoS2 via chalcogenide substitution reaction (CSR) of MoTe2 with lattice inheritance.The MoS2 resulting from the sulfurized MoTe2 sustains ultra large in-plane strain (approaching its strength limit ～10％) with great homogeneity.Furthermore,the strain can be deterministically and continuously tuned to ～1.5％ by simply varying the processing temperature.Thanks to the fine control of our CSR process,we demon-strate a heterostructure of strained MoS2/MoTe2 with abrupt interface.Finally,we verify that such a large strain potentially allows the modulation of MoS2 bandgap over an ultra-broad range (～1 eV).Our control-lable CSR strategy paves the way for the fabrication of highly strained 2D materials for applications in devices.

Kailang Liu;Xiang Chen;Penglai Gong;Ruohan Yu;Jinsong Wu;Liang Li;Wei Han;Sanjun Yang;Chendong Zhang;Jinghao Deng;Aoju Li;Qingfu Zhang;Fuwei Zhuge;Tianyou Zhai

State Key Laboratory of Materials Processing and Die & Mould Technology,School of Materials Science and Engineering,Huazhong University of Science and Technology,Wuhan 430074,China;Nano and Heterogeneous Materials Center,School of Materials Science and Engineering,Nanjing University of Science and Technology,Nanjing 210094,China;Department of Physics,Southern University of Science and Technology,Shenzhen 518055,China;State Key Laboratory of Advanced Technology for Materials Synthesis and Processing,Nanostructure Research Center,Wuhan University of Technology,Wuhan 430070,China;Institutes of Physical Science and Information Technology,Anhui University,Hefei 231699,China;School of Physics and Technology,Wuhan University,Wuhan 430072,China

科学通报（英文版）

[1]Kailang Liu;Xiang Chen;Penglai Gong;Ruohan Yu;Jinsong Wu;Liang Li;Wei Han;Sanjun Yang;Chendong Zhang;Jinghao Deng;Aoju Li;Qingfu Zhang;Fuwei Zhuge;Tianyou Zhai-.Approaching strain limit of two-dimensional MoS2 via chalcogenide substitution)[J].科学通报（英文版）,2022(01):45-53

sulfurized

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