典型文献
Effect of charge trapping on electrical characteristics of silicon junctionless nanowire transistor
文献摘要：
We investigated the effect of charge trapping on electrical characteristics of silicon junctionless nanowire transistors which are fabricated on heavily n-type doped silicon-on-insulator substrate.The obvious random telegraph noise and current hysteresis observed at the temperature of 10 K indicate the existence of acceptor-like traps.The position depth of the traps in the oxide from Si/SiO2 interface is 0.35 nm,calculated by utilizing the dependence of the capture and emission time on the gate voltage.Moreover,by constructing a three-dimensional model of tri-gate device structure in COMSOL Multiphysics simula-tion software,we achieved the trap density of 1.9 x 1012 cm-2 and the energy level position of traps at 0.18 eV below the intrins-ic Fermi level.
文献关键词：
中图分类号：
作者姓名：
Yifan Fu;Liuhong Ma;Zhiyong Duan;Weihua Han
作者机构：
School of Physics and Microelectronics,Zhengzhou University,Zhengzhou 450001,China;Engineering Research Center for Semiconductor Integrated Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100083,China;Institute of Intelligence Sensing in Zhengzhou University,Zhengzhou 450001,China
文献出处：
引用格式：
[1]Yifan Fu;Liuhong Ma;Zhiyong Duan;Weihua Han-.Effect of charge trapping on electrical characteristics of silicon junctionless nanowire transistor)[J].半导体学报（英文版）,2022(05):81-85
A类：
junctionless,telegraph,intrins
B类：
Effect,charge,trapping,electrical,characteristics,silicon,nanowire,We,investigated,effect,transistors,which,fabricated,heavily,type,doped,insulator,substrate,obvious,random,noise,current,hysteresis,observed,temperature,indicate,existence,acceptor,like,traps,position,depth,oxide,from,SiO2,interface,calculated,by,utilizing,dependence,capture,emission,voltage,Moreover,constructing,three,dimensional,model,device,structure,COMSOL,Multiphysics,simula,software,we,achieved,density,energy,level,eV,below,Fermi
AB值：
0.550183
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