典型文献
Fermi level unpinning achievement and transport modification in Hf1-xYbxOy/Al2O3/GaSb laminated stacks by doping engineering
文献摘要：
Fermi level pinning and interface instability have hindered the achievement of field-effect-transistors(FETs)with high performance.Interface passivation and doping engineering technology have become the main driving force to solve the issue.Herein,interface chemistry and transport characteristics determina-tion of Hf1-xYbxOy/Al2O3/GaSb gate stacks have been achieved by passivation and doping process.X-ray photoelectron spectroscopy characterization and electrical measurements have demonstrated the exis-tence of less intrinsic oxides and elemental Sb at Hf1-xYbxOy/Al2O3/GaSb interface with optimized doping content,as well as the minimum leakage current density of 2.23×10-5 A cm-2.The energy distribution of interface state based on conductance method has confirmed the achievement of the lowest interface state density of 1.98×1013 eV--1 cm-2,resulting in Fermi level unpinning.Carrier transport mechanisms of Hf1-xYbxOy/Al2O3/GaSb MOS capacitors as a function of temperature have been investigated systemat-ically and some important electrical parameters have been extracted.Comprehensive analyses show that sputtering-derived Hf1-xYbxOy/AI2O3/GaSb(x=0.32)gate stack has potential application in future GaSb-based metal-oxide-semiconductor field effect transistor(MOSFET)devices.
文献关键词：
中图分类号：
作者姓名：
Lin Hao;Gang He;Shanshan Jiang;Zhenxiang Dai;Ganhong Zheng;Jinyu Lu;Lesheng Qiao;Jingbiao Cui
作者机构：
School of Materials Science and Engineering,Anhui University,Hefei,230601,China;School of Integration Circuits,Anhui University,Hefei,230601,China;School of Physics and Optoelectronics Engineering,Anhui University,Hefei,230601,China;Department of Physics,University of North Texas,Denton,TX,76203,USA
文献出处：
引用格式：
[1]Lin Hao;Gang He;Shanshan Jiang;Zhenxiang Dai;Ganhong Zheng;Jinyu Lu;Lesheng Qiao;Jingbiao Cui-.Fermi level unpinning achievement and transport modification in Hf1-xYbxOy/Al2O3/GaSb laminated stacks by doping engineering)[J].材料科学技术（英文版）,2022(26):130-139
A类：
unpinning,xYbxOy,systemat,AI2O3
B类：
Fermi,level,achievement,transport,modification,Hf1,Al2O3,GaSb,laminated,stacks,by,doping,engineering,interface,instability,have,hindered,field,effect,transistors,FETs,high,performance,Interface,passivation,technology,become,main,driving,force,solve,issue,Herein,chemistry,characteristics,determina,been,achieved,process,ray,photoelectron,spectroscopy,characterization,electrical,measurements,demonstrated,exis,tence,less,intrinsic,oxides,elemental,optimized,content,well,minimum,leakage,current,density,energy,distribution,state,conductance,method,has,confirmed,lowest,eV,resulting,Carrier,mechanisms,capacitors,function,temperature,investigated,ically,some,important,parameters,extracted,Comprehensive,analyses,show,that,sputtering,derived,potential,application,future,metal,semiconductor,MOSFET,devices
AB值：
0.498723
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