典型文献
Design and simulation of type-1 graphene/Si quantum dot superlattice for intermediate-band solar cell applications
文献摘要：
Recent experiments suggest graphene-based materials as candidates for use in future electronic and optoelectronic devices.In this study,we propose a new multilayer quantum dot(QD)superlattice(SL)structure with graphene as the core and silicon(Si)as the shell of QD.The Slater-Koster tight-binding method based on Bloch theory is exploited to investigate the band structure and energy states of the graphene/Si QD.Results reveal that the graphene/Si QD is a type-I QD and the ground state is 0.6 eV above the valance band.The results also suggest that the graphene/Si QD can be potentially used to create a sub-bandgap in all Si-based intermediate-band solar cells(IBSC).The energy level hybridization in a SL of graphene/Si QDs is investigated and it is observed that the mini-band formation is under the influence of inter-dot spacing among QDs.To evaluate the impact of the graphene/Si QD SL on the performance of Si-based solar cells,we design an IBSC based on the graphene/Si QD(QDIBSC)and calculate its short-circuit current density(Jsc)and carrier generation rate(G)using the 2D finite difference time domain(FDTD)method.In comparison with the standard Si-based solar cell which records Jsc=16.9067 mA/cm2 and G=1.48943×1028 m-3·s-1,the graphene/Si QD IBSC with 2 layers of QDs presents Jsc=36.4193 mA/cm2 and G=7.94192x 1028 m-3.s-1,offering considerable improvement.Finally,the effects of the number of QD layers(L)and the height of QD(H)on the performance of the graphene/Si QD IBSC are discussed.
文献关键词：
中图分类号：
作者姓名：
Masumeh Sarkhoush;Hassan Rasooli Saghai;Hadi Soofi
作者机构：
Department of Electrical Engineering,Shabestar Branch,Islamic Azad University,Shabestar 5381637181,Iran;Department of Electrical Engineering,Tabriz Branch,Islamic Azad University,Tabriz 5167636137,Iran;Faculty of Electrical and Computer Engineering,University of Tabriz,Tabriz 5166616471,Iran
文献出处：
引用格式：
[1]Masumeh Sarkhoush;Hassan Rasooli Saghai;Hadi Soofi-.Design and simulation of type-1 graphene/Si quantum dot superlattice for intermediate-band solar cell applications)[J].光电子前沿（英文版）,2022(04):9-17
A类：
Koster,IBSC,QDIBSC,94192x
B类：
Design,simulation,type,graphene,Si,quantum,dot,superlattice,intermediate,solar,applications,Recent,experiments,suggest,materials,candidates,future,optoelectronic,devices,In,this,study,we,propose,new,multilayer,SL,structure,core,silicon,shell,Slater,tight,binding,method,Bloch,theory,exploited,energy,states,Results,reveal,that,ground,eV,above,valance,results,also,potentially,used,create,sub,bandgap,cells,level,hybridization,QDs,investigated,observed,mini,formation,under,influence,spacing,among,To,evaluate,impact,performance,design,calculate,its,short,circuit,current,density,Jsc,carrier,generation,rate,using,2D,finite,difference,domain,FDTD,comparison,standard,which,records,mA,layers,presents,offering,considerable,improvement,Finally,effects,number,height,are,discussed
AB值：
0.430379
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