典型文献
Top gate engineering of field-effect transistors based on wafer-scale two-dimensional semiconductors
文献摘要：
The investigation of two-dimensional(2D)materials has advanced into practical device applications,such as cascaded logic stages.However,incompatible electrical properties and inappropriate logic levels re-main enormous challenges.In this work,a doping-free strategy is investigated by top gated(TG)MoS2 field-effect transistors(FETs)using various metal gates(Au,Cu,Ag,and Al).These metals with different work functions provide a convenient tuning knob for controlling threshold voltage(Vth)for MoS2 FETs.For instance,the Al electrode can create an extra electron doping(n-doping)behavior in the MoS2 TG-FETs due to a dipole effect at the gate-dielectric interface.In this work,by achieving matched electrical properties for the load transistor and the driver transistor in an inverter circuit,we successfully demon-strate wafer-scale MoS2 inverter arrays with an optimized inverter switching threshold voltage(VM)of 1.5 V and a DC voltage gain of 27 at a supply voltage(VDD)of 3 V.This work offers a novel scheme for the fabrication of fully integrated multistage logic circuits based on wafer-scale MoS2 film.
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作者姓名：
Jingyi Ma;Xinyu Chen;Yaochen Sheng;Ling Tong;Xiaojiao Guo;Minxing Zhang;Chen Luo;Lingyi Zong;Yin Xia;Churning Sheng;Yin Wang;Saifei Gou;Xinyu Wang;Xing Wu;Peng Zhou;David Wei Zhang;Chenjian Wu;Wenzhong Bao
作者机构：
State Key Laboratory of ASIC and System,School of Microelectronics,Fudan University,Shanghai,200433,China;In Situ Devices Center,Shanghai Key Laboratory of Multidimensional Information Processing,East China Normal University,Shanghai 200241,China;School of Electronic Information,Soochow University,Suzhou,215006,China
文献出处：
引用格式：
[1]Jingyi Ma;Xinyu Chen;Yaochen Sheng;Ling Tong;Xiaojiao Guo;Minxing Zhang;Chen Luo;Lingyi Zong;Yin Xia;Churning Sheng;Yin Wang;Saifei Gou;Xinyu Wang;Xing Wu;Peng Zhou;David Wei Zhang;Chenjian Wu;Wenzhong Bao-.Top gate engineering of field-effect transistors based on wafer-scale two-dimensional semiconductors)[J].材料科学技术（英文版）,2022(11):243-248
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AB值：
0.590091
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