典型文献
Three-terminal germanium-on-silicon avalanche photodiode with extended p-charge layer for dark current reduction
文献摘要：
Germanium-on-silicon (Ge-on-Si) avalanche photodiodes (APDs) are widely used in near-infrared detection, laser ranging, free space communication, quantum communication, and other fields. However, the existence of lattice defects at the Ge/Si interface causes a high dark current in the Ge-on-Si APD, degrading the device sensitivity and also increasing energy consumption in integrated circuits. In this work, we propose a novel surface illuminated Ge-on-Si APD architecture with three terminals. Besides two electrodes on Si substrates, a third electrode is designed for Ge to regulate the control current and bandwidth, achieving multiple outputs of a single device and reducing the dark current of the device. When the voltage on Ge is -27.5 V, the proposed device achieves a dark current of 100 nA, responsivity of 9.97 A/W at -40 dBm input laser power at 1550 nm, and optimal bandwidth of 142 MHz. The low dark current and improved responsivity can meet the requirements of autonomous driving and other applications demanding weak light detection.
文献关键词：
中图分类号：
作者姓名：
Xiaobin Liu;Xuetong Li;Yuxuan Li;Yingzhi Li;Zihao Zhi;Min Tao;Baisong Chen;Lanxuan Zhang;Pengfei Guo;Guoqiang Lo;Xueyan Li;Fengli Gao;Bonan Kang;Junfeng Song
作者机构：
State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China;Advance Micro Foundry Pte Ltd, Singapore 117685, Singapore;Peng Cheng Laboratory, Shenzhen 518000, China
文献出处：
引用格式：
[1]Xiaobin Liu;Xuetong Li;Yuxuan Li;Yingzhi Li;Zihao Zhi;Min Tao;Baisong Chen;Lanxuan Zhang;Pengfei Guo;Guoqiang Lo;Xueyan Li;Fengli Gao;Bonan Kang;Junfeng Song-.Three-terminal germanium-on-silicon avalanche photodiode with extended p-charge layer for dark current reduction)[J].光子学研究（英文）,2022(08):1956
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AB值：
0.593234
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