典型文献
Band gap tuning and p to n-type transition in Mn-doped CuO nanostructured thin films
文献摘要：
Here we discuss the synthesis of copper (Ⅱ) oxide (CuO) and manganese (Mn)-doped CuO thin films varying with 0 to 8 at％ Mn using the spray pyrolysis technique.As-deposited film surfaces comprised of agglomerated spherical nanoparticles and a semi-spongy porous structure for 4 at％ Mn doping.Energy dispersive analysis of X-rays confirmed the chemical composi-tion of the films.X-ray diffraction spectra showed a polycrystalline monoclinic structure with the predominance of the (111)peak.Optical band gap energy for direct and indirect transitions was estimated in the ranges from 2.67-2.90 eV and 0.11-1.73 eV,respectively.Refractive index and static dielectric constants were computed from the optical spectra.Electrical resistivity of CuO and Mn-doped CuO (Mn∶CuO) thin films was found in the range from 10.5 to 28.6 Ω.cm.The tiniest electron effective mass was calculated for 4 at％ Mn:CuO thin films.P to n-type transition was observed for 4 at％ Mn doping in CuO films.Carrier con-centration and mobility were found in the orders of 1017 cm-3 and 10-1 cm2/(V.s),respectively.The Hall coefficient was found to be between 9.9 and 29.8 cm3/C.The above results suggest the suitability of Mn:CuO thin films in optoelectronic applications.
文献关键词：
中图分类号：
作者姓名：
R.Rahaman;M.Sharmin;J.Podder
作者机构：
Department of Physics,Bangladesh University of Engineering and Technology,Dhaka 1000,Bangladesh
文献出处：
引用格式：
[1]R.Rahaman;M.Sharmin;J.Podder-.Band gap tuning and p to n-type transition in Mn-doped CuO nanostructured thin films)[J].半导体学报（英文版）,2022(01):79-88
A类：
tiniest
B类：
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AB值：
0.530994
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