典型文献
Tune the electronic structure of MoS2 homojunction for broadband photodetection
文献摘要：
Due to the weak absorption and low light-matter interaction of MoS2,intrinsic MoS2 photodetector usu-ally has low photoresponse,thus limiting its real application.Herein,MoS2 homojunction was constructed by using the chemical vapor deposition grown intrinsic MoS2 films and the Nb-doped MoS2 films.The re-sults show that the Nb doping will induce p-type doping in MoS2,where the electron concentration will decrease by 2.08×1012 cm-2 after Nb doping.By investigating the photoelectric effect of MoS2/Nb-doped MoS2 homojunction-based phototransistor,the tunability of the photoresponse,detectivity as the function of the external field,wavelength,and power of light have been studied in detail.The results show that the photoresponse and detectivity are strongly dependent on the gate voltage due to the external field tuned interlayer photoexcitation attributing to the band bending.The maximum of photoresponse can reach 51.4 A/W,the detectivity can reach 3.0 x 1012 Jones,which is two orders higher than that of in-trinsic MoS2.Furthermore,by correlating the photoresponse and detectivity with the external field,it is found that the photodetection of MoS2 homojunction can be significantly tuned and exhibit well pho-todetection in infrared.This comprehensive work not only sheds light on the tunable photoexcitation mechanism but also offers a strategy to achieve a high-performance photodetector.
文献关键词：
中图分类号：
作者姓名：
Rui Tao;Xianlin Qu;Zegao Wang;Fang Li;Lei Yang;Jiheng Li;Dan Wang;Kun Zheng;Mingdong Dong
作者机构：
College of Materials Science and Engineering,Sichuan University,Chengdu 610065,China;Beijing Key Lab of Microstructure and Properties of Solids,Faculty of Materials and Manufacturing,Beijing University of Technology,Beijing 100124,China;State Key Laboratory for Advanced Metals&Materials,University of Science&Technology Beijing,Beijing 100083,China;State Key Laboratory of Organic-Inorganic Composites,Beijing University of Chemical Technology,Beijing 100029,China;Interdisciplinary Nanoscience Center,Aarhus University,Aarhus 8000,Denmark
文献出处：
引用格式：
[1]Rui Tao;Xianlin Qu;Zegao Wang;Fang Li;Lei Yang;Jiheng Li;Dan Wang;Kun Zheng;Mingdong Dong-.Tune the electronic structure of MoS2 homojunction for broadband photodetection)[J].材料科学技术（英文版）,2022(24):61-68
A类：
todetection
B类：
Tune,electronic,structure,MoS2,homojunction,broadband,photodetection,Due,weak,absorption,low,light,matter,interaction,intrinsic,photodetector,usu,ally,has,photoresponse,thus,limiting,its,real,application,Herein,was,constructed,by,using,chemical,vapor,deposition,grown,films,Nb,doped,show,that,doping,will,induce,type,where,concentration,decrease,after,By,investigating,photoelectric,effect,phototransistor,tunability,detectivity,function,external,field,wavelength,power,have,been,studied,detail,results,strongly,dependent,gate,voltage,due,tuned,interlayer,photoexcitation,attributing,bending,maximum,reach,Jones,which,two,orders,higher,than,Furthermore,correlating,found,significantly,exhibit,well,infrared,This,comprehensive,work,not,only,sheds,tunable,mechanism,also,offers,strategy,achieve,performance
AB值：
0.524791
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