典型文献
Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility
文献摘要：
The lack of stable p-type van der Waals(vdW)semiconductors with high hole mobility severely impedes the step of low-dimensional materials entering the industrial circle.Although p-type black phosphorus(bP)and tellurium(Te)have shown promising hole mobilities,the instability under ambient condi-tions of bP and relatively low hole mobility of Te remain as daunting issues.Here we report the growth of high-quality Te nanobelts on atomically flat hexagonal boron nitride(h-BN)for high-performance p-type field-effect transistors(FETs).Importantly,the Te-based FET exhibits an ultrahigh hole mobility up to 1370 cm2 V-1 s-1 at room temperature,that may lay the foundation for the future high-performance p-type 2D FET and metal-oxide-semiconductor(p-MOS)inverter.The vdW h-BN dielectric substrate not only provides an ultra-flat surface without dangling bonds for growth of high-quality Te nanobelts,but also reduces the scattering centers at the interface between the channel material and the dielectric layer,thus resulting in the ultrahigh hole mobility.
文献关键词：
中图分类号：
作者姓名：
Peng Yang;Jiajia Zha;Guoyun Gao;Long Zheng;Haoxin Huang;Yunpeng Xia;Songcen Xu;Tengfei Xiong;Zhuomin Zhang;Zhengbao Yang;Ye Chen;Dong-Keun Ki;Juin J.Liou;Wugang Liao;Chaoliang Tan
作者机构：
College of Electronics and Information Engineering,Shenzhen University,Shenzhen 518060,People's Republic of China;Department of Electrical Engineering,City University of Hong Kong,Hong Kong SAR,People's Republic of China;Department of Physics,The University of Hong Kong,Pokfulam Road,Hong Kong SAR,People's Republic of China;Department of Chemistry,The Chinese University of Hong Kong,Hong Kong SAR,People's Republic of China;Department of Chemistry,City University of Hong Kong,Hong Kong SAR,People's Republic of China;Department of Mechanical Engineering,City University of Hong Kong,Hong Kong SAR,People's Republic of China;Center of Super-Diamond and Advanced Films(COSDAF),City University of Hong Kong,Hong Kong SAR,People's Republic of China
文献出处：
引用格式：
[1]Peng Yang;Jiajia Zha;Guoyun Gao;Long Zheng;Haoxin Huang;Yunpeng Xia;Songcen Xu;Tengfei Xiong;Zhuomin Zhang;Zhengbao Yang;Ye Chen;Dong-Keun Ki;Juin J.Liou;Wugang Liao;Chaoliang Tan-.Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility)[J].纳微快报（英文）,2022(07):43-54
A类：
Tellurium,Nanobelts
B类：
Growth,BN,type,Transistors,Ultrahigh,Hole,Mobility,stable,van,Waals,vdW,semiconductors,hole,mobility,severely,impedes,step,low,dimensional,materials,entering,industrial,circle,Although,black,phosphorus,bP,tellurium,have,shown,promising,mobilities,instability,under,ambient,condi,tions,relatively,remain,daunting,issues,Here,report,growth,quality,nanobelts,atomically,flat,hexagonal,boron,nitride,performance,field,effect,transistors,FETs,Importantly,exhibits,ultrahigh,up,room,temperature,that,may,foundation,future,2D,metal,oxide,MOS,inverter,dielectric,substrate,not,only,provides,surface,without,dangling,bonds,but,also,reduces,scattering,centers,interface,between,channel,layer,thus,resulting
AB值：
0.600154
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机标中图分类号，由域田数据科技根据网络公开资料自动分析生成，仅供学习研究参考。
