典型文献
Large Room-Temperature Magnetoresistance in van der Waals Ferromagnet/Semiconductor Junctions
文献摘要：
A magnetic tunnel junction(MTJ)is the core component in memory technologies,such as the magnetic random-access memory,magnetic sensors and programmable logic devices.In particular,MTJs based on two-dimensional van der Waals(vdW)heterostructures offer unprecedented opportunities for low power consumption and miniaturization of spintronic devices.However,their operation at room temperature remains a challenge.Here,we report a large tunnel magnetoresistance(TMR)of up to 85％at room temperature(T=300 K)in vdW MTJs based on a thin(＜10 nm)semiconductor spacer WSe2 layer embedded between two Fe3GaTe2 electrodes with intrinsic above-room-temperature ferromagnetism.The TMR in the MT J increases with decreasing tem-perature up to 164％at T=10 K.The demonstration of TMR in ultra-thin MTJs at room temperature opens a realistic and promising route for next-generation spintronic applications beyond the current state of the art.
文献关键词：
中图分类号：
作者姓名：
Wenkai Zhu;Shihong Xie;Hailong Lin;Gaojie Zhang;Hao Wu;Tiangui Hu;Ziao Wang;Xiaomin Zhang;Jiahan Xu;Yujing Wang;Yuanhui Zheng;Faguang Yan;Jing Zhang;Lixia Zhao;Amalia Patanè;Jia Zhang;Haixin Chang;Kaiyou Wang
作者机构：
State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;School of Physics and Astronomy,University of Nottingham,Nottingham NG7 2RD,United Kingdom;Center for Joining and Electronic Packaging,State Key Laboratory of Material Processing and Die&Mold Technology,School of Materials Science and Engineering,Huazhong University of Science and Technology,Wuhan 430074,China;Wuhan National High Magnetic Field Center,Huazhong University of Science and Technology,Wuhan 430074,China;School of Electrical and Electronic Engineering,Tiangong University,Tianjin 300387,China;School of Physics,Huazhong University of Science and Technology,Wuhan 430074,China
文献出处：
引用格式：
[1]Wenkai Zhu;Shihong Xie;Hailong Lin;Gaojie Zhang;Hao Wu;Tiangui Hu;Ziao Wang;Xiaomin Zhang;Jiahan Xu;Yujing Wang;Yuanhui Zheng;Faguang Yan;Jing Zhang;Lixia Zhao;Amalia Patanè;Jia Zhang;Haixin Chang;Kaiyou Wang-.Large Room-Temperature Magnetoresistance in van der Waals Ferromagnet/Semiconductor Junctions)[J].中国物理快报（英文版）,2022(12):103-107
A类：
Ferromagnet,Junctions,MTJs,Fe3GaTe2
B类：
Large,Room,Temperature,Magnetoresistance,van,der,Waals,Semiconductor,magnetic,tunnel,junction,core,component,memory,technologies,such,random,access,sensors,programmable,logic,devices,In,particular,two,dimensional,vdW,heterostructures,offer,unprecedented,opportunities,low,power,consumption,miniaturization,spintronic,However,their,operation,room,temperature,remains,challenge,Here,report,large,magnetoresistance,TMR,up,thin,semiconductor,spacer,WSe2,layer,embedded,between,electrodes,intrinsic,above,ferromagnetism,increases,decreasing,demonstration,ultra,opens,realistic,promising,route,next,generation,applications,beyond,current,state
AB值：
0.564153
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机标中图分类号，由域田数据科技根据网络公开资料自动分析生成，仅供学习研究参考。
