典型文献
Two-dimensional Boron Nitride for Electronics and Energy Applications
文献摘要:
Two-dimensional(2D)boron nitride(BN),the so-called"white graphene,"has demonstrated a great potential in various fields,particularly in electronics and energy,by utilizing its wide bandgap(~5.5 eV),superior thermal stability,high thermal conductance,chemical inertness,and outstanding dielectric properties.However,to further optimize the performances from the view of structure-property relationship,the determinative factors such as crystallite sizes,layer thickness,dispersibility,and surface functionalities should be precisely controlled and adjusted.Therefore,in this review,the synthesis and functionalization methods including"top-down"and"bottom-up"strategies,and non-covalent and covalent modifications for 2D BN are systematically classified and discussed at first,thus catering for the requirements of versatile applications.Then,the progresses of 2D BN applied in the fields of microelectronics such as field-effect transistors and dielectric capacitors,energy domains such as thermal energy management and conversion,and batteries and supercapacitors are summarized to highlight the importance of 2D BN.Notably,these contents not only contain the state-of-the-art 2D BN composites,but also bring the current novel design of 2D BN-based microelectronic units.Finally,the challenges and perspectives are proposed to better broaden the scope of this material.Therefore,this review will pave an all-around way for understanding,utilizing,and applying 2D BN in future electronics and energy applications.
文献关键词:
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作者姓名:
Jiemin Wang;Liangzhu Zhang;Lifeng Wang;Weiwei Lei;Zhong-Shuai Wu
作者机构:
School of New Energy and Materials,Southwest Petroleum University,Chengdu Sichuan 610500,China;State Key Laboratory of Catalysis,Dalian Institute of Chemical Physics,Chinese Academy of Sciences,Dalian 116023,China;Institute for Frontier Materials,Deakin University,Waurn Ponds Campus,Locked Bag 20000,Geelong Vic.3220,Australia;Dalian National Laboratory for Clean Energy,Chinese Academy of Sciences,457 Zhongshan Road,Dalian 116023,China
文献出处:
引用格式:
[1]Jiemin Wang;Liangzhu Zhang;Lifeng Wang;Weiwei Lei;Zhong-Shuai Wu-.Two-dimensional Boron Nitride for Electronics and Energy Applications)[J].能源与环境材料(英文),2022(01):10-44
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B类:
Two,dimensional,Boron,Nitride,Electronics,Energy,Applications,2D,boron,nitride,BN,called,white,graphene,has,demonstrated,great,potential,various,fields,particularly,energy,by,utilizing,wide,bandgap,eV,superior,thermal,stability,conductance,chemical,inertness,outstanding,dielectric,properties,However,further,optimize,performances,from,structure,property,relationship,determinative,factors,such,crystallite,sizes,layer,thickness,dispersibility,surface,functionalities,should,precisely,controlled,adjusted,Therefore,this,review,synthesis,functionalization,methods,including,top,down,bottom,strategies,covalent,modifications,are,systematically,classified,discussed,first,thus,catering,requirements,versatile,applications,Then,progresses,applied,microelectronics,effect,transistors,domains,management,conversion,batteries,supercapacitors,summarized,highlight,importance,Notably,these,contents,not,only,contain,state,composites,but,also,bring,current,novel,design,units,Finally,challenges,perspectives,proposed,better,broaden,scope,material,will,pave,around,way,understanding,applying,future
AB值:
0.656249
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