典型文献
High-Performance Indium-Gallium-Zinc-Oxide Thin-Film Transistors with Stacked Al2O3/HfO2 Dielectrics
文献摘要：
High-performance amorphous indium-gallium-zinc-oxide thin-film transistors(a-IGZO TFTs)gated by Al2O3/Hf02 stacked dielectric films are investigated.The optimized TFTs with AI203(2.0nm)/HfO2(13 nm)stacked gate dielectrics demonstrate the best performance,including low total trap density Nt,low subthreshold swing voltage,large switching ratio ION/OFF,high mobility μFE,and low operating voltage,equal to 1.35 x 1012 cm-2,88mV/dec,5.24×108,14.2cm2/V-s,and 2.0 V,respectively.Furthermore,a low-voltage-operated resistor-loaded inverter has been fabricated based on such an a-IGZO TFT,showing ideal full swing characteristics and high gain of～27 at 3.0 V.These results indicate a-IGZO TFTs gated by optimized Al203/Hf02 stacked dielectrics are of great interests for low-power,high performance,and large-area display and emerging electronics.
文献关键词：
中图分类号：
作者姓名：
Yue Li;Li Zhu;Chunsheng Chen;Ying Zhu;Changjin Wan;Qing Wan
作者机构：
School of Electronic Science and Engineering,Nanjing University,Nanjing 210093,China
文献出处：
引用格式：
[1]Yue Li;Li Zhu;Chunsheng Chen;Ying Zhu;Changjin Wan;Qing Wan-.High-Performance Indium-Gallium-Zinc-Oxide Thin-Film Transistors with Stacked Al2O3/HfO2 Dielectrics)[J].中国物理快报（英文版）,2022(11):110-113
A类：
Dielectrics,Hf02,AI203,88mV
B类：
High,Performance,Indium,Gallium,Zinc,Oxide,Thin,Film,Transistors,Stacked,Al2O3,HfO2,performance,amorphous,indium,gallium,zinc,oxide,thin,transistors,IGZO,TFTs,by,stacked,films,investigated,optimized,0nm,dielectrics,demonstrate,best,including,low,total,trap,density,Nt,subthreshold,swing,voltage,large,switching,ratio,ION,OFF,high,mobility,FE,operating,equal,dec,2cm2,respectively,Furthermore,operated,resistor,loaded,inverter,has,been,fabricated,such,showing,ideal,full,characteristics,gain,These,results,indicate,Al203,great,interests,power,area,display,emerging,electronics
AB值：
0.624643
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