典型文献
Growth Behavior of Rubrene Thin Films on Hexagonal Boron Nitride in the Early Stage
文献摘要：
Two-dimensional materials,with an in-plane ordered and dangling-bonding-free surface,are ideal substrates for fabricating high-quality crystalline thin films.Here,we show a systematic study on the growth of a benchmark organic semiconductor,rubrene,on hexagonal boron nitride(h-BN)substrate via physical vapor deposition from the initial amorphous phase to the final crystalline phase;the role of temperature in such transition and the epitaxy relationship between rubrene and h-BN are revealed.With the increase of substrate temperature,the critical thickness of amorphous-crystalline-transition decreases and the morphology of crystalline phase also evolves from porous to terrace-like.When substrate temperature reaches＞100℃,the critical thickness reduces to only 0.5 nm and a precise layer-by-layer growth from the very first layer is achieved,which is quite rare for rubrene growing on other substrates.The high ordering can be attributed to the fine epitaxy relationship between rubrene films and the h-BN surface lattice,and this film demonstrates good charge transport ability with a p-type field-effect mobility of＞1 cm2·V-1·s-1.
文献关键词：
中图分类号：
作者姓名：
Yujia Wei;Di Xue;Lianlian Ji;Jie Lu;Qi Wang;Xingyu Jiang;Yinghui Sun;Zi Wang;Lizhen Huang;Lifeng Chi
作者机构：
Institute of Functional Nano&Soft Materials(FUNSOM),Jiangsu Key Laboratory for Carbon-Based Functional Materials&Devices,Collaborative Innovation Center of Suzhou Nano Science and Technology,Soochow University,Suzhou,Jiangsu 215123,China;College of Energy,Soochow Institute for Energy and Materials Innovations,Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province,Soochow University,Suzhou,Jiangsu 215006,China;Gusu Laboratory of Materials,Suzhou,Jiangsu 215123,China
文献出处：
引用格式：
[1]Yujia Wei;Di Xue;Lianlian Ji;Jie Lu;Qi Wang;Xingyu Jiang;Yinghui Sun;Zi Wang;Lizhen Huang;Lifeng Chi-.Growth Behavior of Rubrene Thin Films on Hexagonal Boron Nitride in the Early Stage)[J].中国化学（英文版）,2022(11):1298-1304
A类：
Rubrene,rubrene
B类：
Growth,Behavior,Thin,Films,Hexagonal,Boron,Nitride,Early,Stage,Two,dimensional,materials,plane,ordered,dangling,bonding,free,surface,ideal,substrates,fabricating,high,quality,crystalline,thin,films,Here,show,systematic,study,growth,benchmark,organic,semiconductor,hexagonal,boron,nitride,BN,via,physical,vapor,deposition,from,initial,amorphous,phase,final,role,temperature,such,transition,epitaxy,relationship,between,revealed,With,increase,critical,thickness,decreases,morphology,also,evolves,porous,terrace,like,When,reaches,reduces,only,precise,layer,by,very,first,achieved,which,quite,rare,growing,other,ordering,can,attributed,fine,lattice,this,demonstrates,good,charge,transport,ability,type,field,effect,mobility
AB值：
0.601056
相似文献
机标中图分类号，由域田数据科技根据网络公开资料自动分析生成，仅供学习研究参考。
