典型文献
Poly(arylene ether nitrile)Dielectric Film Modified by Bi2S3/rGO-CN Fillers for High Temperature Resistant Electronics Fields
文献摘要:
High-quality film capacitors are widely used in many fields such as new energy vehicles,electronic communications,etc.,due to their advantages in wide frequency response and low dielectric loss.The dielectric film is a crucial part of the film capacitor,and its properties have an important impact on the performance and use conditions of the film capacitor.In this work,a novel high-temperature-resistant dielectric film was prepared.Firstly,the Bi2S3/rGO-CN fillers were prepared by hydrothermal method combined with cyanation treatment,and then added to the poly(arylene ether nitrile)(PEN)matrix to prepare the dielectric film materials(PEN/Bi2S3/rGO-CN).After high temperature treatment,the fillers Bi2S3/rGO-CN reacted with the PEN matrix,and the composites materials transformed into a thermosetting hybrid film(PEN-Bi2S3/rGO)with gel content of 97.88%.The prepared hybrid dielectric films did not decompose significantly before 400℃,and showed a glass transition temperature(Tg)of up to 252.4℃,which could increase the effective use temperature of the materials.Compared with the composite films without heat treatment,they exhibit better mechanical properties,with further improvement in tensile strength and elastic modulus,and a decrease in elongation at break.The dielectric constant of the hybrid films can be up to 6.8 while the dielectric loss is only about 0.02 at 1 kHz.Moreover,the hybrid films showed excellent dielectric stability during temperature changes,and remain relatively stable before 250℃,which is suitable as a high-temperature-resistant high-dielectric material and is more advantageous for practical applications.
文献关键词:
中图分类号:
作者姓名:
Li-Fen Tong;Liang He;Chen-Hao Zhan;Yun-Qing Xia;Xiao-Bo Liu
作者机构:
School of Materials and Energy,University of Electronic Science and Technology of China,Chengdu 610054,China;Sichuan Province Engineering Technology Research Center of Novel CN Polymeric Materials,Chengdu 610054,China
文献出处:
引用格式:
[1]Li-Fen Tong;Liang He;Chen-Hao Zhan;Yun-Qing Xia;Xiao-Bo Liu-.Poly(arylene ether nitrile)Dielectric Film Modified by Bi2S3/rGO-CN Fillers for High Temperature Resistant Electronics Fields)[J].高分子科学(英文版),2022(11):1441-1450
A类:
cyanation
B类:
Poly,arylene,ether,nitrile,Dielectric,Film,Modified,by,Bi2S3,rGO,CN,Fillers,High,Temperature,Resistant,Electronics,Fields,quality,capacitors,widely,used,many,fields,such,new,energy,vehicles,electronic,communications,etc,due,their,advantages,frequency,response,low,dielectric,loss,crucial,part,its,properties,have,important,impact,performance,conditions,In,this,work,novel,high,temperature,resistant,was,prepared,Firstly,fillers,were,hydrothermal,method,combined,treatment,then,added,poly,PEN,matrix,materials,After,reacted,composites,transformed,into,thermosetting,hybrid,gel,content,films,did,not,decompose,significantly,before,showed,glass,transition,Tg,up,which,could,increase,effective,Compared,without,heat,they,exhibit,better,mechanical,further,improvement,tensile,strength,elastic,modulus,decrease,elongation,break,constant,while,only,about,kHz,Moreover,excellent,stability,during,changes,remain,relatively,stable,suitable,more,advantageous,practical,applications
AB值:
0.531647
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