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典型文献
Boosting electroluminescence performance of all solution processed InP based quantum dot light emitting diodes using bilayered inorganic hole injection layers
文献摘要：
The development of high-performance InP-based quantum dot light-emitting diodes (QLEDs) has become the current trend in ecofriendly display and lighting technology. However, compared with Cd-based QLEDs that have already been devoted to industry, the efficiency and stability of InP-based QLEDs still face great challenges. In this work, colloidal NiOx and Mg-doped NiOx nanocrystals were used to prepare a bilayered hole injection layer (HIL) to replace the classical polystyrene sulfonate (PEDOT:PSS) HIL to construct high-performance InP-based QLEDs. Compared with QLEDs with a single HIL of PEDOT:PSS, the bilayered HIL enables the external quantum efficiencies of the QLEDs to increase from 7.6% to 11.2%, and the T95 lifetime (time that the device brightness decreases to 95% of its initial value) under a high brightness of 1000 cd m-2 to prolong about 7 times. The improved performance of QLEDs is attributed to the bilayered HIL reducing the mismatched potential barrier of hole injection, narrows the potential barrier difference of indium tin oxide (ITO)/hole transport layer interface to promote carrier balance injection, and realizes high-efficiency radiative recombination. The experimental results indicate that the use of bilayered HILs with p-type NiOx might be an efficient method for fabricating high-performance InP-based QLEDs.
文献关键词：
中图分类号：
[1] 自动化技术、计算机技术（TP） / 计算技术、计算机技术（TP3） / 计算机的应用（TP39） / 信息处理(信息加工)（TP391）
[2] 医药、卫生（R） / 药学（R9） / 药理学（R96） / 实验药理学（R965）
[3] 数理科学和化学（O） / 力学（O3） / 振动理论（O32） / 非线性振动（O322）
作者姓名：
Qiuyan Li;Sheng Cao;Peng Yu;Meijing Ning;Ke Xing;Zhentao Du;Bingsuo Zou;Jialong Zhao
作者机构：
School of Physical Science and Technology, MOE Key Laboratory of New Processing Technology for Non-ferrous Metals and Materials, Guangxi University, Nanning 530004, China;e-mail: caosheng@gxu.edu.cn;e-mail: zhaojl@ciomp.ac.cn
文献出处：
光子学研究（英文）
引用格式：
[1]Qiuyan Li;Sheng Cao;Peng Yu;Meijing Ning;Ke Xing;Zhentao Du;Bingsuo Zou;Jialong Zhao-.Boosting electroluminescence performance of all solution processed InP based quantum dot light emitting diodes using bilayered inorganic hole injection layers)[J].光子学研究（英文）,2022(09):2133
A类：
T95,HILs
B类：
Boosting,electroluminescence,performance,solution,processed,InP,quantum,dot,emitting,diodes,using,bilayered,inorganic,hole,injection,layers,development,high,QLEDs,has,become,current,trend,ecofriendly,display,lighting,technology,However,compared,Cd,that,have,already,been,devoted,industry,efficiency,stability,still,great,challenges,this,work,colloidal,NiOx,Mg,doped,nanocrystals,were,used,prepare,replace,classical,polystyrene,sulfonate,PEDOT,PSS,construct,Compared,single,enables,external,efficiencies,increase,from,lifetime,device,brightness,decreases,its,initial,value,under,cd,prolong,about,times,improved,attributed,reducing,mismatched,potential,barrier,narrows,difference,indium,oxide,ITO,transport,interface,promote,carrier,balance,realizes,radiative,recombination,experimental,results,indicate,type,might,efficient,method,fabricating
AB值：
0.516246
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