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典型文献
Boosting electroluminescence performance of all solution processed InP based quantum dot light emitting diodes using bilayered inorganic hole injection layers
文献摘要：
The development of high-performance InP-based quantum dot light-emitting diodes(QLEDs)has become the current trend in ecofriendly display and lighting technology.However,compared with Cd-based QLEDs that have already been devoted to industry,the efficiency and stability of InP-based QLEDs still face great challenges.In this work,colloidal NiOx and Mg-doped NiOx nanocrystals were used to prepare a bilayered hole injection layer(HIL)to replace the classical polystyrene sulfonate(PEDOT:PSS)HIL to construct high-performance InP-based QLEDs.Compared with QLEDs with a single HIL of PEDOT:PSS,the bilayered HIL enables the external quantum efficiencies of the QLEDs to increase from 7.6％to 11.2％,and the T95 lifetime(time that the device brightness decreases to 95％of its initial value)under a high brightness of 1000 cd m-2 to prolong about 7 times.The improved performance of QLEDs is attributed to the bilayered HIL reducing the mismatched potential barrier of hole injection,narrows the potential barrier difference of indium tin oxide(ITTO)/hole transport layer interface to promote carrier balance injection,and realizes high-efficiency radiative recombination.The exper-imental results indicate that the use of bilayered HILs with p-type NiOx might be an efficient method for fab-ricating high-performance InP-based QLEDs.
文献关键词：
中图分类号：
[1] 自动化技术、计算机技术（TP） / 计算技术、计算机技术（TP3） / 计算机的应用（TP39） / 信息处理(信息加工)（TP391）
[2] 医药、卫生（R） / 药学（R9） / 药理学（R96） / 实验药理学（R965）
[3] 数理科学和化学（O） / 力学（O3） / 振动理论（O32） / 非线性振动（O322）
作者姓名：
QIUYAN LI;SHENG CAO;PENG YU;MEIJING NING;KE XING;ZHENTAO DU;BINGSUO ZOU;JIALONG ZHAO
作者机构：
School of Physical Science and Technology,MOE Key Laboratory of New Processing Technology for Non-ferrous Metals and Materials,Guangxi University,Nanning 530004,China
文献出处：
光子学研究（英文）
引用格式：
[1]QIUYAN LI;SHENG CAO;PENG YU;MEIJING NING;KE XING;ZHENTAO DU;BINGSUO ZOU;JIALONG ZHAO-.Boosting electroluminescence performance of all solution processed InP based quantum dot light emitting diodes using bilayered inorganic hole injection layers)[J].光子学研究（英文）,2022(09):2133-2139
A类：
T95,ITTO,HILs
B类：
Boosting,electroluminescence,performance,solution,processed,InP,quantum,dot,emitting,diodes,using,bilayered,inorganic,hole,injection,layers,development,high,QLEDs,has,become,current,trend,ecofriendly,display,lighting,technology,However,compared,Cd,that,have,already,been,devoted,industry,efficiency,stability,still,great,challenges,this,work,colloidal,NiOx,Mg,doped,nanocrystals,were,used,prepare,replace,classical,polystyrene,sulfonate,PEDOT,PSS,construct,Compared,single,enables,external,efficiencies,increase,from,lifetime,device,brightness,decreases,its,initial,value,under,cd,prolong,about,times,improved,attributed,reducing,mismatched,potential,barrier,narrows,difference,indium,oxide,transport,interface,promote,carrier,balance,realizes,radiative,recombination,exper,imental,results,indicate,type,might,efficient,method,fab,ricating
AB值：
0.518242
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